Avalanche transistor operation at extreme currents: Physical reasons for low residual voltages

Solid-State Electronics

Volumn 47, Issue 8, 2003, Pages 1255-1263

  Vainshtein, Sergey N ^a   Yuferev, Valentin S ^b   Kostamovaara, Juha T ^a  

^a UNIVERSITY OF OULU   (Finland)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Avalanche breakdown; Microwave switches; Semiconductor switches

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; MICROWAVES;

RESIDUAL VOLTAGES;

SEMICONDUCTOR SWITCHES;

EID: 0038273858     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00007-8     Document Type: Article

References (11)

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