Picosecond range switching of a GaAs avalanche transistor due to bulk carrier generation by avalanching Gunn domains

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5352, Issue , 2004, Pages 382-393

  Vainshtein, Sergey ^a   Yuferev, Valentin ^b   Kostamovaara, Juha ^a  

^a UNIVERSITY OF OULU   (Finland)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Avalanche multiplication; Bipolar transistor; GaAs; Gunn domains; Microwave switch

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; LASER PULSES; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

AVALANCHE MULTIPLICATION; MICROWAVE SWITCHES;

BIPOLAR TRANSISTORS;

EID: 3543140617     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.520782     Document Type: Conference Paper

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