Properties of the transient of avalanche transistor switching at extreme current densities

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 142-149

  Vainshtein, Sergey N ^b,c   Yuferev, Valentin S ^b,c   Kostamovaara, Juha T ^a,b  

^a IEEE

^b UNIVERSITY OF OULU   (Finland)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Avalanche breakdown; Microwave switches; Semiconductor switches

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRON SCATTERING; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SWITCHES;

AVALANCHE BREAKDOWN; AVALANCHE TRANSISTOR; CARRIER INJECTION; MICROWAVE SWITCH;

TRANSISTORS;

EID: 0036247891     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974761     Document Type: Article

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