Demonstration of the first 4H-SiC avalanche photodiodes

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 341-346

  Feng Yan, ^a   Zhao, Jian H ^a   Olsen, Gregory H ^b  

^a RUTGERS UNIVERSITY   (United States)

^b GOODRICH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; GAIN MEASUREMENT; LEAKAGE CURRENTS; OPTICAL PROPERTIES; PASSIVATION; PHOTOCURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE;

AVALANCHE BREAKDOWN; MESA EDGE TERMINATION; OPTICAL GAIN; OPTOELECTRICAL CHARACTERIZATION; PHOTO RESPONSIVITY; REACH THROUGH AVALANCHE PHOTODIODES; TEMPERATURE COEFFICIENT; THERMAL OXIDE PASSIVATION TECHNIQUES;

PHOTODIODES;

EID: 0343526838     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00240-3     Document Type: Article

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