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Volumn 40, Issue 1, 2004, Pages 85-86

Superfast high-current switching of GaAs avalanche transistor

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CARRIER MOBILITY; ELECTRIC LOADS; ELECTRIC POTENTIAL; ELECTRIC SWITCHES; INDUCTANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; THYRISTORS; VAPOR PHASE EPITAXY; WAVEFORM ANALYSIS;

EID: 0346499652     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040043     Document Type: Article
Times cited : (25)

References (11)
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  • 3
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    • Biernat, A.1    Kompa, G.2
  • 4
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    • Properties of the transient of avalanche transistor switching at extreme current densities
    • Vainshtein, S.N., Yuferev, V.S., and Kostamovaara, J.T.: 'Properties of the transient of avalanche transistor switching at extreme current densities', IEEE Trans. Electr. Dev., 2002, 49, pp. 142-149
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  • 6
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    • Hur, J.H., et al.: 'GaAs-based opto-thyristor for pulsed power applications', IEEE Trans. Electr. Dev., 1990, 37, pp. 2520-2525
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    • Hur, J.H.1
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    • Zhao, J.H., et al.: 'A novel high-power optothyristor based on AlGaAs/GaAs for pulsed power - switching applications', IEEE Trans. Electr. Dev., 1994, 41, pp. 819-825
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.