The theory of operation of transistorized Marx bank circuits

Review of Scientific Instruments

Volumn 70, Issue 4, 1999, Pages 2155-2160

  Mallik, Kanad ^a  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009051938     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1149729     Document Type: Article

References (26)

1. E. A. Jung and R. N. Lewis, Nucl. Instrum. Methods 44, 224 (1966).
2. S. J. Davis, J. E. Murray, D. C. Downs, and E. H. Lowdermilk, Appl. Opt. 17, 3184 (1978).
3. J. Jethwa, E. E. Marinero, and A. Muller, Rev. Sci. Instrum. 52, 989 (1981).
4. T. Kanabe, M. Nakatsuka, Y. Kato, and C. Yamanaka, Technol. Rep. Osaka Univ. 32, (1672), 349 (1982).
5. D. M. Benzel and M. D. Pocha, Rev. Sci. Instrum. 56, 1456 (1985).
6. J. Christensen, K. Frank, and W. Hartmann, Nucl. Instrum. Methods Phys. Res. A 256, 529 (1987),
7. R. J. Baker, Rev. Sci. Instrum. 62, 1031 (1991).
8. A. K. Dharmadhikari, S. A. Dharmadhikari, K. P. Adhi, N. Y. Mehendale, and R. C. Aiyer, Rev. Sci. Instrum. 67, 4399 (1996).
9. A. Chatterjee, K. Mallik, and S. M. Oak, Rev. Sci. Instrum. 69, 2166 (1998).
10. H. B. Grutchfield and T. J. Moutoux, IEEE Trans. Electron Devices ED-13, 743 (1966).
11. P. L. Hower and V. G. K. Reddi, IEEE Trans. Electron Devices ED-17, 320 (1970).
12. B. A. Beatty, S. Krishna, and M. S. Adler, IEEE Trans. Electron Devices ED-23, 851 (1976).
13. K. Koyanagi, K. Hane, and T. Suzuki, IEEE Trans. Electron Devices ED-24, 672 (1977).
14. T. F. Wrobel, F. N. Coppage, G. L. Hash, and A. J. Smith, IEEE Trans. Nucl. Sci. NS-32, 3991 (1985).
15. C. T. Kirk, IRE Trans. Electron Devices ED-9, 164 (1962).
16. D. L. Bowler and F. A. Lindholm, IEEE Trans. Electron Devices ED-20. 257 (1973).
17. J. J. Liou, Advanced Semiconductor Device Physics and Modeling (Artech House, Boston, 1994), p. 129.
18. S. Wang, Fundamentals of Semiconductor Theory and Device Physics (Prentice-Hall, Englewood Cliffs, NJ, 1989), p. 415.
19. W. T. Read, Bell Syst. Tech. J. March, 401 (1958).
20. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 582.
21. J. Smith, in Gallium Arsenide: Materials, Devices, and Circuits, edited by M. J. Hower and D. V. Morgan (Wiley, Chichester, 1985), p. 336.
22. In Ref. 20, p. 100.
23. In Ref. 18, p, 480.
24. In Ref. 20, p. 573.
25. S. M. Oak, K. S. Bindra, B. S. Narayan, and R. K. Khardekar, Rev. Sci. Instrum. 62, 308 (1991).
26. A. Kilpela and J. Kostamovaara, Rev. Sci, Instrum. 68, 2253 (1997).