Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

Advanced Functional Materials

Volumn 25, Issue 11, 2015, Pages 1727-1736

  Labram, John G ^a   Lin, Yen Hung ^a,b   Zhao, Kui ^c   Li, Ruipeng ^d   Thomas, Stuart R ^a   Semple, James ^a   Androulidaki, Maria ^e   Sygellou, Lamprini ^e   McLachlan, Martyn ^a   Stratakis, Emmanuel ^e   Amassian, Aram ^c   Anthopoulos, Thomas D ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b DUTCH POLYMER INSTITUTE DPI   (Netherlands)

^c KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^d Cornell University ^*  (United States)

^e INSTITUTE OF CHEMICAL ENGINEERING SCIENCES   (Greece)

Author keywords

energy quantization; resonant tunneling diodes; semiconducting oxides; solution processed semiconductors; zinc oxide

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; METALLIC COMPOUNDS; MOS DEVICES; RESONANT TUNNELING; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS; TRANSISTORS; TUNNEL DIODES; ZINC; ZINC OXIDE;

ENERGY QUANTIZATION; EXPERIMENTAL EVIDENCE; INORGANIC SEMICONDUCTORS; METAL OXIDE SEMICONDUCTOR; NEGATIVE DIFFERENTIAL CONDUCTANCE; PEAK-TO-VALLEY RATIOS; SEMICONDUCTING OXIDE; SOLUTION-PROCESSED;

RESONANT TUNNELING DIODES;

EID: 85027954494     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201403862     Document Type: Article

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