Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices

Solid-State Electronics

Volumn 46, Issue 10, 2002, Pages 1633-1637

  Krishnamoorthy, Soumya ^a   Iliadis, Agis A ^a   Inumpudi, Aravind ^a   Choopun, Supab ^b   Vispute, Ratnakar D ^b   Venkatesan, Tirumalai ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b Bldg 142   (United States)

Author keywords

Devices; ITO; PLD Growth; Resonant tunneling; ZnMgO; ZnO

Indexed keywords

ELECTRIC RESISTANCE; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; RESONANT TUNNELING; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; ZINC OXIDE;

OPTICAL TRANSITIONS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0036779143     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00117-X     Document Type: Article

References (13)

1. Piezoelectric contributions to the electrical behavior of ZnO varistors
2. Patterning of ZnO thin films
3. Exciton spectra of ZnO epitaxial layers on lattice-matched substrates
4. High quality crystalline ZnO buffer layers on sapphire for pulsed laser deposition of nitrides
5. Novel AlInSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature
6. Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire
7. Improved ITO thin films with a thin ZnO buffer layer
8. Single quantum well heterostructures of MgZnO/ZnO/MgZnO on c-plane sapphire
9. Room temperature luminescence of excitons in ZnO/(Mg, Zn)O multiple quantum wells on lattice-matched substrates