An RTD/transistor switching block and its possible application in binary and ternary adders

IEEE Transactions on Electron Devices

Volumn 44, Issue 12, 1997, Pages 2149-2153

  Huber, J L ^a   Chen, J ^a   McCormack, J A ^a   Zhou, C W ^b   Reed, M A ^b  

^a Digital Semiconductor   (United States)

^b YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDERS; BIPOLAR TRANSISTORS; CURRENT VOLTAGE CHARACTERISTICS;

RESONANT TUNNELING DIODES (RTD); SWITCHING CELLS; TERNARY ADDER CIRCUITS;

TUNNEL DIODES;

EID: 0031365763     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.644628     Document Type: Article

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