Characteristics of 600, 1200, and 3300 v planar SiC-MOSFETs for energy conversion applications

IEEE Transactions on Electron Devices

Volumn 62, Issue 2, 2015, Pages 390-395

  Imaizumi, Masayuki ^a   Miura, Naruhisa ^a,b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Future Power Electronics Technology   (Japan)

Author keywords

Body diode; planar MOSFET; power module; reverse bias safe operating area (RBSOA); silicon carbide (SiC); switching loss; threshold voltage

Indexed keywords

BIAS VOLTAGE; DIODES; ELECTRIC POWER SYSTEMS; POWER ELECTRONICS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; THRESHOLD VOLTAGE;

BODY DIODE; PLANAR MOSFET; POWER MODULE; REVERSE BIAS SAFE OPERATING AREAS; SILICON CARBIDES (SIC); SWITCHING LOSS;

MOSFET DEVICES;

EID: 85027930916     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2358581     Document Type: Article

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