Silicon carbide power MOSFETs: Breakthrough performance from 900 v up to 15 kV

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2014, Pages 79-82

  Palmour, J W ^a   Cheng, L ^a   Pala, V ^a   Brunt, E V ^a   Lichtenwalner, D J ^a   Wang, G Y ^a   Richmond, J ^a   O'Loughlin, M ^a   Ryu, S ^a   Allen, S T ^a   Burk, A A ^a   Scozzie, C ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; SILICON CARBIDE;

4H-SIC MOSFETS; BIPOLAR DEVICE; BREAKTHROUGH PERFORMANCE; FABRICATION PROCESS; HIGH FREQUENCY HF; HIGH-FREQUENCY SWITCHING; SPECIFIC-ON-RESISTANCE; VOLTAGE RATINGS;

RATING;

EID: 84905512208     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2014.6855980     Document Type: Conference Paper

References (4)

1. D. Grider, M. Das A. Agarwal and J. Palmour, "10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation", IEEE Electric Ship Technologies Symp, 2010, pp 131-134.
2. L. Cheng, S-H. Ryu, A. Agarwal, M. O'Loughlin, A. Burk, J. Richmond, A. Lelis, C. Scozzie, and J. Palmour, "High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs", Materials Science Forums, Vols. 717-720 (2012), pp. 1065-1068, 2012.
3. J M. Briere, "GaN based power devices," RPI CFES Conference, January 2013.
4. 5SMX 12M6501 IGBT datasheet, www05.abb.com