Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 288-291

  Furukawa, A ^a   Kinouchi, S ^a   Nakatake, H ^a   Ebiike, Y ^a   Kagawa, Y ^a   Miura, N ^a   Nakao, Y ^a   Imaizumi, M ^a   Sumitani, H ^a   Oomori, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC MOSFETS; BLOCKING VOLTAGE; CURRENT RATIOS; CURRENT SENSORS; HIGH-POWER DEVICES; ON-RESISTANCE; SPECIFIC-ON-RESISTANCE; TEMPERATURE RANGE;

MOSFET DEVICES; SILICON CARBIDE;

SENSORS;

EID: 84880707840     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890847     Document Type: Conference Paper

References (5)

1. G. Majumdar, "Power Module Technology for Home power Electronics", Proceedings on IEEE International Power Electronics Conference (2010) pp773-777.
2. N. Miura, K. Fujihira, Y. Nakao, T. Watanabe, Y. Tarui, S. Kinouchi, M. Imaizumi and T Oomori, "Successful development of 1.2 kV 4H-SiC MOSFETs with the very low on-resistance of 5mcm2", Proc. ISPSD (2006) pp261-264.
3. T. Nakamura, M. Sasagawa, Y. Nakano, T. Otsuka and M. Miura, "Large current SiC power devices for automobile applications", Proceedings on IEEE International Power Electronics Conference (2010) pp1023-1026.
4. D. Tournier, M. Vellvehi1, P. Godignon, J. Montserrat1, D. Planson and F. Sarrus, "Current sensing for SiC Power Devices", Mater. Sci. Forum. 527-529 (2006) pp1215-1218.
5. T. Watanabe, S. Aya, R. Hattori, M. Imaizumi and T. Oomori, "Effects of implantation temperature on sheet and contact resistance of heavily Al implanted 4H-SiC", Mater. Sci. Forum. 645-648 (2010) pp705-708.