Substantial reduction of power loss in a 14kVA inverter using paralleled SiC-MOSFETs and SiC-SBDs

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 903-906

  Nakata, S ^a   Kinouchi, S ^a   Sawada, T ^a   Oi, T ^a   Oomori, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Inverter; MOSFET; Power loss; SBD

Indexed keywords

ELECTRIC INVERTERS; SILICON CARBIDE;

CALORIMETRIC METHODS; CARRIER FREQUENCY; INVERTER; INVERTER MODULE; MOS-FET; POWER APPLICATIONS; POWER-LOSSES; SUBSTANTIAL REDUCTION;

POWER MOSFET;

EID: 79251582848     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.903     Document Type: Conference Paper

References (3)

1. S. Kinouchi, H. Nakatake, T. Kitamura, S. Azuma, S. Tominaga, S. Nakata, Y. Nakao, T. Oi, and T. Oomori: Proceedings of International Conference on Silicon Carbide and Related Materials 2007, Otsu, Japan (2007) Mat. Sci. Forum, in press.
2. N. Miura, K. Fujihira, Y. Nakao, T. Watanabe, Y. Tarui, S. Kinouchi, M. Imaizumi, and T. Oomori: Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs (2006), p. 261.
3. B. Szabados and A. Mihalcea: IEEE Instr. and Meas. Tech. Conf. (2001), p. 1785.