3.3kV SiC MOSFETs designed for low on-resistance and fast switching

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2012, Pages 389-392

  Bolotnikov, Alexander ^a   Losee, Peter ^a   Matocha, Kevin ^a   Glaser, John ^a   Nasadoski, Jefrey ^a   Wang, Lei ^a   Elasser, Ahmed ^a   Arthur, Steven ^a   Stum, Zachary ^a   Sandvik, Peter ^a   Sui, Yang ^a   Johnson, Tammy ^a   Sabate, Juan ^a   Stevanovic, Ljubisa ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

high voltage; MOSFET; power; SiC

Indexed keywords

3 LEVELS; FAST SWITCHING; HIGH VOLTAGE; HIGH-VOLTAGES; LATEST DEVELOPMENT; MOS-FET; MOSFETS; ON-RESISTANCE; POWER; POWER CONVERSION SYSTEMS; SIC; SWITCHING LOSS;

SILICON CARBIDE;

MOSFET DEVICES;

EID: 84864742476     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2012.6229103     Document Type: Conference Paper

References (8)

1. K. Matocha, P. Losee, S. Arthur, J. Nasadoski, J. Glaser, G. Dunne, L. Stevanovic, "1400 volt, 5mOhm-cm2 SiC MOSFETs for high-speed switching", IEEE Intern. Symp. on Power Semiconductor Devices and ICs, p. 365 (2010).
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3. Z. Stum, A. V. Bolotnikov Z. Stum, A. V. Bolotnikov, P.A. Losee, K. Matocha, S. Arthur, J. Nasadoski, R. Rao, O. Saadeh, L. Stevanovic, R. Myers-Ward, C. R. Eddy, K. D. Gaskill, "4kV Silicon Carbide MOSFETs", Materials Science Forum vol. 679-680, p. 637 (2011).
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6. CREE 1.2kV SiC MOSFET CMF20120D datasheet, http://www.cree.com/
7. J. S. Glaser, J. J. Nasadoski, P. A. Losee, A. S. Kashyap, K. S. Matocha, J. L. Garrett, L. D. Stevanovic, "Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications", IEEE Applied Power Electronics Conference and Exposition APEC, p. 1049 (2011).
8. 2, 1500V 4H-SiC DMOSFETs for advanced high power, high frequency applications", IEEE Intern. Symp. on Power Semiconductor Devices and IC, p. 227 (2011).