Blocking characteristics of 2.2 kV and 3.3 kV -class 4H-SiC MOSFETs with improved doping control for edge termination

Materials Science Forum

Volumn 778-780, Issue , 2014, Pages 915-918

  Wada, Keiji ^a   Uchida, Kosuke ^a   Kimura, Ren ^a   Sakai, Mitsuhiko ^a   Hatsukawa, Satoshi ^a   Hiratsuka, Kenji ^a   Hirakata, Noriyuki ^a   Mikamura, Yasuki ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Edge termination; Field limiting ring; High voltage; MOSEFET

Indexed keywords

ELECTRIC BREAKDOWN; JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES;

DOPING CONCENTRATION; EDGE TERMINATION; FIELD-LIMITING RING; HIGH VOLTAGE; JUNCTION TERMINATION EXTENSIONS; MOSEFET; SPECIFIC-ON RESISTANCE; SWITCHING CHARACTERISTICS;

SILICON CARBIDE;

EID: 84896077858     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.778-780.915     Document Type: Conference Paper

References (7)

1. M. Bhatnagar, and B. J. Baliga: IEEE Trans. Electron Devices, vol. 40 (1993), p. 645.
2. H. Onose, S. Oikawa, T. Yatsuo, and Yutaka: in Proc. Int. Symp. Power Semicond. Devices ICs, 2000, p. 245.
3. T. Hiyoshi, T. Hori, Jun Suda, and T. Kimoto: IEEE Trans. Electron Devices, vol. 55 (2008), p. 1841.
4. K. Danno, K. Hashimoto, H. Saitoh, T. Kimoto, and H. Matsunami: Jpn. J. Appl. Phys., vol. 43, L969-L971, 2004.
5. T. Hori, K. Danno, and T. Kimoto: J. Cryst. Growth, vol. 306, p. 2297, 2007.
6. H. Niwa, J. Suda, and T. Kimoto: Appl. Phys. Express, vol. 5, p. 064001, 2012.
7. D. C. Sheridan, G. Niu, J. N. Merrett, J. D. Cresssler, C. Ellis, and C. Tin: Solid-State Electronics, vol. 44 (2000), 1367-1372.