Development of 3.3 kV SiC-MOSFET: Suppression of forward voltage degradation of the body diode

Materials Science Forum

Volumn 778-780, Issue , 2014, Pages 951-954

  Yamamoto, Shigehisa ^a   Nakao, Yukiyasu ^a   Tomita, Nobuyuki ^a   Nakata, Shuhei ^a   Yamakawa, Satoshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Body diode; MOSFET; Reliability; SiC; Stacking faults

Indexed keywords

COST REDUCTION; DIODES; MOSFET DEVICES; OPTIMIZATION; RELIABILITY; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; STACKING FAULTS;

BODY DIODE; ELECTRON-HOLE RECOMBINATION; FORWARD CURRENTS; FREEWHEELING DIODES; MOS-FET; RELIABILITY DEGRADATION; SCHOTTKY BARRIER DIODE(SBD); SCREENING METHODS;

POWER SEMICONDUCTOR DIODES;

EID: 84896085576     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.778-780.951     Document Type: Conference Paper

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