Switching characteristics of SiC-MOSFET and SBD power modules

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1289-1292

  Imaizumi, M ^a   Tarui, Y ^a   Kinouchi, S ^a   Nakatake, H ^a   Nakao, Y ^a   Watanabe, T ^a   Fujihira, K ^a   Miura, N ^a   Takami, T ^a   Ozeki, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

MOSFET; Power module; SBD; Switching characteristics; Switching loss

Indexed keywords

ELECTRIC LOSSES; GATE DIELECTRICS; POWER ELECTRONICS; SILICON CARBIDE; SWITCHING CIRCUITS; WAVEFORM ANALYSIS;

POWER MODULES; SWITCHING CHARACTERISTICS; SWITCHING LOSSES; TAIL CURRENTS;

MOSFET DEVICES;

EID: 37849033792     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1289     Document Type: Conference Paper

References (4)

1. S. Harada, M. Okamoto, T. Yatsuo, K. Fukuda and K. Arai: Mater. Sci. Forum Vol. 483-485 (2005), p. 813.
2. E. Okuno, T. Endo, H. Matsuki, T. Sakakibara and H. Tanaka: Mater. Sci. Forum Vol. 483-485 (2005), p. 817.
3. S. Ryu, S. Krishnaswami, M. Das, B. Hull, J. Richmond, B. Heath, A. Agarwal, J. Palmour and J. Scofield: Proc. ISPSD'05 (2005), p. 23.
4. Y. Tarui, T. Watanabe, K. Fujihira, N. Miura, Y. Nakao, M. Imaizumi, H. Sumitani, T. Takami, T. Ozeki and T. Oomori: ICSCRM 2005, WC2, these Proceedings