14.6 mΩcm2 3.4 kV DIMOSFET on 4H-SiC (000-1)

Materials Science Forum

Volumn 778-780, Issue , 2014, Pages 935-938

  Kono, Hiroshi ^a,b   Furukawa, Masaru ^a,b   Ariyoshi, Keiko ^a,b   Suzuki, Takuma ^a,b   Tanaka, Yasunori ^a   Shinohe, Takashi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

4H SiC; C face; DIMOSFET; MOSFET

Indexed keywords

METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; WIDE BAND GAP SEMICONDUCTORS;

4H-SIC; BLOCKING VOLTAGE; DIMOSFET; DRAIN VOLTAGE; GATE BIAS; MOS-FET; SPECIFIC-ON RESISTANCE;

SILICON CARBIDE;

EID: 84896097501     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.778-780.935     Document Type: Conference Paper

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