Threshold voltage instability of SiC-MOSFETs on various crystal faces

Materials Science Forum

Volumn 778-780, Issue , 2014, Pages 521-524

  Senzaki, Junji ^a,b   Shimozato, Atsushi ^b   Kojima, Kazutoshi ^a,b   Harada, Shinsuke ^a,b   Ariyoshi, Keiko ^a   Kojima, Takahito ^a   Tanaka, Yasunori ^a,b   Okumura, Hajime ^a,b  

^a R and D Partnership for Future Power Electronics Technology (FUPET)   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

a face; Bias temperature stress; C face; H2 anneal; Hydrogen related species; MOSFET; Threshold voltage

Indexed keywords

ALUMINUM NITRIDE; AMMONIA; BIAS VOLTAGE; GATES (TRANSISTOR); SILICON CARBIDE; THRESHOLD VOLTAGE;

A-FACE; BIAS TEMPERATURE STRESS; MOS-FET; NITRIDATION TREATMENTS; POST-OXIDATION ANNEALING; PYROGENIC OXIDATION; THRESHOLD-VOLTAGE INSTABILITIES; VTH INSTABILITIES;

MOSFET DEVICES;

EID: 84896081496     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.778-780.521     Document Type: Conference Paper

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