Impact of intrinsic atomic defects on the electronic structure of MoS 2 monolayers

Nanotechnology

Volumn 25, Issue 37, 2014, Pages

  Kc, Santosh ^a   Longo, Roberto C ^a   Addou, Rafik ^a   Wallace, Robert M ^a,b   Cho, Kyeongjae ^a,b  

^a The University of Texas at Dallas   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

defects; density functional theory; surface

Indexed keywords

DEFECT STRUCTURES; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SURFACES; THERMOELECTRIC EQUIPMENT;

CRYSTALLINE QUALITY; DEFECT MORPHOLOGY; DEFECT PASSIVATION; DICHALCOGENIDES; DIRECT BAND GAP SEMICONDUCTORS; ELECTRONIC DEVICE; ON/OFF CURRENT RATIO;

MOLYBDENUM COMPOUNDS;

EID: 84906707655     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/37/375703     Document Type: Article

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