Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates

Journal of Applied Physics

Volumn 115, Issue 3, 2014, Pages

  Tian, Pengfei ^a   McKendry, Jonathan J D ^a   Gong, Zheng ^a,d   Zhang, Shuailong ^a   Watson, Scott ^b   Zhu, Dandan ^c   Watson, Ian M ^a   Gu, Erdan ^a   Kelly, Anthony E ^b   Humphreys, Colin J ^c   Dawson, Martin D ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d MLED Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC RESISTANCE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LIGHT; LIGHT MODULATION; LIGHT TRANSMISSION; OPTICAL COMMUNICATION; OPTICAL PROPERTIES; OPTICAL SIGNAL PROCESSING; PIXELS;

DATA TRANSMISSION RATES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL-TO-OPTICAL; EPITAXIAL STRUCTURE; GAN-BASED LIGHT-EMITTING DIODES; MODULATION BANDWIDTH; RECOMBINATION PROCESS; RESISTANCE CAPACITANCE;

LIGHT EMITTING DIODES;

EID: 85014230427     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4862298     Document Type: Article

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