High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates

Small

Volumn 8, Issue 11, 2012, Pages 1643-1649

  Kim, Tae Il ^a   Jung, Yei Hwan ^a   Song, Jizhou ^b   Kim, Daegon ^a   Li, Yuhang ^c,d   Kim, Hoon Sik ^a   Song, Il Sun ^e   Wierer, Jonathan J ^f   Pao, Hsuan An ^a   Huang, Yonggang ^c   Rogers, John A ^a,e  

^a University of Illinois at Urbana Champaign   (United States)

^b University of Miami College of Engineering   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

^d HARBIN INSTITUTE OF TECHNOLOGY   (China)

^e UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^f SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

flexible electronics; gallium nitride; laser lift off (LLO); light emitting diodes; transfer printing

Indexed keywords

FOREIGN SUBSTANCES; GAN LIGHT-EMITTING DIODES; LASER LIFT-OFF; LATERAL DIMENSION; MICRO-SCALES; PULSED-MODE OPERATION; SMALL DEVICES; THEORETICAL STUDY; TRANSFER PRINTING; ULTRA-THIN;

DIODES; FLEXIBLE ELECTRONICS; GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

GALLIUM; GALLIUM NITRATE;

ARTICLE; CHEMISTRY; ELECTRONICS; ILLUMINATION; INSTRUMENTATION; NANOTECHNOLOGY;

ELECTRONICS; GALLIUM; LIGHTING; NANOTECHNOLOGY;

EID: 84861885668     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201200382     Document Type: Article

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