III-Nitride full-scale high-resolution microdisplays

Applied Physics Letters

Volumn 99, Issue 3, 2011, Pages

  Day, Jacob ^a   Li, J ^b   Lie, D Y C ^a   Bradford, Charles ^c   Lin, J Y ^a   Jiang, H X ^a  

^a Texas Tech University   (United States)

^b III N Technology Inc   (United States)

^c U S ARMY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATRIXES; BIO PHOTONICS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DRIVE SCHEMES; EMISSION INTENSITY; ENERGY EFFICIENT; GRAPHICS IMAGES; HIGH RESOLUTION; HYBRID INTEGRATION; III-NITRIDE; III-NITRIDE SEMICONDUCTORS; INTEGRATED DEVICE; LED ARRAYS; LUMINANCE LEVELS; MICRODISPLAYS; OPERATIONAL TEMPERATURE; ORDERS OF MAGNITUDE; SI CMOS;

CMOS INTEGRATED CIRCUITS; INTEGRATION; LIQUID CRYSTALS; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

NITRIDES;

EID: 79960752509     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3615679     Document Type: Article

References (20)

1. A. Bergh, G. Crawford, A. Duggal, and R. Haitz, Phys. Today 54 (December), 42 (2001). 10.1063/1.1445547
2. Y. Narukawa, M. Sano, M. Ichikawa, S. Minato, T. Sakamoto, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys. 46, L963 (2007). 10.1143/JJAP.46.L963 (Pubitemid 350085445)
3. S. X. Jin, J. Li, J. Z. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 76, 631 (1999). 10.1063/1.125841
4. S. X. Jin, J. Li, J. Shakya, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 78, 3532 (2001). 10.1063/1.1376152
5. H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, Appl. Phys. Lett. 78, 1303 (2001). 10.1063/1.1351521 (Pubitemid 33662272)
6. H. X. Jiang, S. X. Jin, J. Li, and J. Y. Lin, U.S. patent 6,410,940 (2002).
7. H. X. Jiang and J. Y. Lin, CRC Crit. Rev. Solid State Mater. Sci. 28, 131 (2003). 10.1080/10408430390802440
8. J. J. D. McKendry, B. R. Rae, Z. Gong, K. R., Muir, B. Guilhabert, D. Massoubre, E. Gu, D. Renshaw, M. D. Dawson, and R. K. Henderson, IEEE Photon. Technol. Lett. 21, 811 (2009). 10.1109/LPT.2009.2019114
9. H. X. Jiang, J. Y. Lin, and S. X. Jin, U.S. patent 6,957,899 (2005) and 7,221,044 (2007).
10. Z. Y. Fan, J. Li, J. Y. Lin, and H. X. Jiang, U.S. patent 7,714,348 (2010).
11. Z. Y. Fan, H. X. Jiang, and J. Y. Lin, J. Phys. D: Appl. Phys., 41 094001 (2008). 10.1088/0022-3727/41/9/094001 (Pubitemid 351591054)
12. V. Poher, N. Grossman, G. T. Kennedy, K. Nikolic, H. X. Zhang, Z. Gong, E. M. Drakakis, E. Gu, M. D. Dawson, P. M. W. French, P. Degenaar, and M. A. Neil, J. Phys. D: Appl. Phys. 41, 094014 (2008). 10.1088/0022-3727/41/9/094014 (Pubitemid 351591067)
13. N. Grossman, V. Poher, M. S. Grubb, G. T. Kennedy, K. Nikolic, B. McGovern, P. R. Berlinguer, Z. Gong, E. M. Drakakis, M. A. Neil, M. D. Dawson, J. Burrone, and P. Degenaar, J. Neural Eng. 7, 016004 (2010). 10.1088/1741-2560/7/1/016004
14. P. Degenaar, N. Grossman, M. Memon, J. Burrone, M. D. Dawson, E. Drakakis, M. A. Neil, and K. Nikolic, J. Neural Eng. 6, 035007 (2009). 10.1088/1741-2560/6/3/035007
15. T. Young and C. Chen, Biomaterials 27, 3361 (2006). 10.1016/j. biomaterials.2006.02.001
16. W. E. Howard and O. F. Prache, IBM J. Res. Dev. 45, 115 (2001). 10.1147/rd.451.0115
17. D. Vettese, Nat. Photon. 4, 752 (2010).
18. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999). 10.1063/1.371145
19. S. Nakamura, S. J. Pearton, and G. Fasol, G. Meas. Sci. Technol. 12, 755 (2001).
20. J. Dennemarck, T. Böttcher, S. Figge, S. Einfeldt, R. Kröger, D. Hommel, E. Kaminska, W. Wiatroszak, and A. Piotrowska, Phys. Status Solidi C 1, 2537 (2004). 10.1002/pssc.v1:10