High-efficiency InGaN/GaN quantum well structures on large area silicon substrates

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 1, 2012, Pages 13-16

  Zhu, D ^a   McAleese, C ^b   Haberlen M ^c   Kappers, M J ^a   Hylton, N ^d   Dawson, P ^d   Radtke, G ^e   Couillard, M ^f   Botton, G A ^f   Sahonta, S L ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b AIXTRON Nanoinstruments Ltd   (United Kingdom)

^c UNIVERSITY OF PADERBORN   (Germany)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

^e AIX MARSEILLE UNIVERSITÉ   (France)

^f MCMASTER UNIVERSITY   (Canada)

Author keywords

electron microscopy; GaN; InGaN; LEDs; MOVPE; silicon

Indexed keywords

ACTIVE REGIONS; ALGAN; ALN; ALN NUCLEATION LAYERS; ATOMIC RESOLUTION; GAN; GAN TEMPLATE; GROWTH TECHNIQUES; INGAN; INGAN/GAN MQWS; INGAN/GAN QUANTUM WELL; INTERNAL QUANTUM EFFICIENCY; LEDS; MULTIQUANTUM WELLS; SI(111) SUBSTRATE; SILICON SUBSTRATES; STRAIN-MEDIATING; THREADING DISLOCATION DENSITIES;

AMORPHOUS SILICON; COMPOSITE FILMS; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; GALLIUM NITRIDE; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON NITRIDE; SILICON WAFERS; SUBSTRATES;

QUANTUM EFFICIENCY;

EID: 84055218399     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100129     Document Type: Review

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