First-principle electronic properties of dilute-as GaNAs alloy for visible light emitters

IEEE/OSA Journal of Display Technology

Volumn 9, Issue 4, 2013, Pages 272-279

  Tan, Chee Keong ^a   Zhang, Jing ^a   Li, Xiao Hang ^a   Liu, Guangyu ^a   Tayo, Benjamin O ^a   Tansu, Nelson ^a  

^a Lehigh University   (United States)

Author keywords

Auger recombination; band parameters; band structure; dilute As GaNAs; First Principle; lasers; light emitting diodes

Indexed keywords

AUGER RECOMBINATION; BAND PARAMETERS; DENSITY-FUNCTIONAL CALCULATIONS; DILUTE-AS GANAS; ELECTRONS AND HOLES; EXPERIMENTAL DATUM; FIRST PRINCIPLES; VISIBLE LIGHT EMITTERS;

AUGERS; BAND STRUCTURE; ELECTRONIC PROPERTIES; ENERGY GAP; LASERS; LIGHT EMITTING DIODES;

GALLIUM ALLOYS;

EID: 84875634917     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2013.2248342     Document Type: Article

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