Radiation damage of N-MOSFETS fabricated in a BiCMOS process

Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 4-6, 2001, Pages 227-230

  Kobayashi, K ^a   Ohyama, H ^b   Yoneoka, M ^b   Hayama, K ^b   Nakabayashi, M ^c   Simoen, E ^d   Claeys, C ^d   Takami, Y ^e   Takizawa, H ^f   Kohiki, S ^g  

^a NEC IC Microcomputer Systems Ltd   (Japan)

^b KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c MITSUBISHI ELECTRIC CORPORATION   (Japan)

^d IMEC   (Belgium)

^e RIKKYO UNIVERSITY   (Japan)

^f JAPAN ATOMIC ENERGY AGENCY   (Japan)

^g KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRONS; IONIZATION; IRRADIATION; MOSFET DEVICES; NEUTRONS; RADIATION DAMAGE; SPUTTERING;

INTERFACE TRAP DENSITY; THERMAL ANNEALING;

CMOS INTEGRATED CIRCUITS;

EID: 0035299487     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1011203218743     Document Type: Article

References (5)