Comparison of gate-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 605-612

  Okhonin, Serguei ^a   Hessler, Thierry ^a   Dutoit, Michel ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC VARIABLES MEASUREMENT; HOT CARRIERS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MATHEMATICAL MODELS; SHORT CIRCUIT CURRENTS;

CHARGE PUMPING; ELECTRIC STRESS; GATE INDUCED DRAIN LEAKAGE MEASUREMENTS; INTERFACE TRAPS;

MOSFET DEVICES;

EID: 0030125770     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485543     Document Type: Article

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