p-n Junction diagnostics to determine surface and bulk generation/recombination properties of silicon substrates

Journal of the Electrochemical Society

Volumn 146, Issue 3, 1999, Pages 1151-1157

  Claeys, C ^a   Poyai, A ^a   Simoen, E ^a   Czerwinski, A ^a   Katcki, J ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

CAPACITANCE-VOLTAGE CHARACTERISTICS;

SILICON WAFERS;

EID: 0033097210     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391737     Document Type: Article

References (28)