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Volumn 73, Issue 23, 1998, Pages 3369-3371

Room-temperature diffusivity of self-interstitials and vacancies in ion-implanted Si probed by in situ measurements

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[No Author keywords available]

Indexed keywords


EID: 0001192587     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122753     Document Type: Article
Times cited : (29)

References (14)
  • 1
    • 0001599099 scopus 로고
    • edited by S. Pantelides (Gordon and Breach, New York,) and references therein
    • G. D. Watkins, Deep Centers in Semiconductors, edited by S. Pantelides (Gordon and Breach, New York, 1986), p. 147, and references therein.
    • (1986) Deep Centers in Semiconductors , pp. 147
    • Watkins, G.D.1
  • 5
    • 0000608072 scopus 로고
    • Electronic Structure and Properties of Semiconductors
    • edited by W. Schröter edited by R. W. Cahn, P. Haasen, and E. J. Kramer (VHC, Weinherin,)
    • G. D. Watkins, Electronic Structure and Properties of Semiconductors, edited by W. Schröter, Material Science and Technology, Vol. 407, edited by R. W. Cahn, P. Haasen, and E. J. Kramer (VHC, Weinherin, 1991).
    • (1991) Material Science and Technology , vol.407
    • Watkins, G.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.