-
1
-
-
0000345915
-
Radiation studies and operational projections for silicon in the ATLAS inner detector
-
A. Chilingarov et al., "Radiation studies and operational projections for silicon in the ATLAS inner detector", Nucl. Instr. and Meth. A, 360, pp. 432-437, 1995.
-
(1995)
Nucl. Instr. and Meth. A
, vol.360
, pp. 432-437
-
-
Chilingarov, A.1
-
2
-
-
33748621800
-
Statistics of the recombination of holes and electrons
-
W. Shockley and W.T. Read, Jr., "Statistics of the recombination of holes and electrons", Phys. Rev., 87, pp. 835-842, 1952.
-
(1952)
Phys. Rev.
, vol.87
, pp. 835-842
-
-
Shockley, W.1
Read Jr., W.T.2
-
3
-
-
33747734981
-
A new model for generation-recombination in silicon depletion regions after neutron irradiation
-
15-19 July
-
S.J. Watts et al., "A new model for generation-recombination in silicon depletion regions after neutron irradiation", presented at the IEEE Nuclear & Space Radiation Effects Conference, 15-19 July 1996.
-
(1996)
IEEE Nuclear & Space Radiation Effects Conference
-
-
Watts, S.J.1
-
4
-
-
0030214788
-
Effects of deep level defects in semiconductor detectors
-
G. Lutz, "Effects of deep level defects in semiconductor detectors", Nucl. Instr. and Meth. A, 377, pp. 234-243, 1996.
-
(1996)
Nucl. Instr. and Meth. A
, vol.377
, pp. 234-243
-
-
Lutz, G.1
-
6
-
-
33747678957
-
60Co-gammas in high resistivity silicon detectors using Deep Level Transient Spectroscopy
-
Proceedings of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy
-
60Co-gammas in high resistivity silicon detectors using Deep Level Transient Spectroscopy", Proceedings of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy, 1996, to be published in NIM.
-
(1996)
NIM
-
-
Moll, M.1
-
7
-
-
0001669864
-
Entropy of ionization and temperature variation of ionization levels of defects in semiconductors
-
J.A. Van Vechten and C.D. Thurmond, "Entropy of ionization and temperature variation of ionization levels of defects in semiconductors", Phys. Rev. B, 14, pp. 3529-3550, 1976.
-
(1976)
Phys. Rev. B
, vol.14
, pp. 3529-3550
-
-
Van Vechten, J.A.1
Thurmond, C.D.2
-
8
-
-
35949040606
-
High-field isothermal currents and thermally stimulated currents in insulators having discrete trapping levels
-
J.G. Simmons and G.W. Taylor, "High-field isothermal currents and thermally stimulated currents in insulators having discrete trapping levels", Phys. Rev. B, 5, pp. 1619-1629, 1971.
-
(1971)
Phys. Rev. B
, vol.5
, pp. 1619-1629
-
-
Simmons, J.G.1
Taylor, G.W.2
-
9
-
-
0041758095
-
Leakage current, annealing, and deep defect production studies in neutron irradiated n-type Si-detectors
-
E. Borchi et al., "Leakage current, annealing, and deep defect production studies in neutron irradiated n-type Si-detectors", Nucl. Instr. and Meth. A, 301, pp. 215-218, 1991.
-
(1991)
Nucl. Instr. and Meth. A
, vol.301
, pp. 215-218
-
-
Borchi, E.1
-
10
-
-
0029358688
-
Elevated temperature annealing of neutron induced reverse current and corresponding defect levels in low and high resistivity silicon detectors
-
V. Eremin et al., "Elevated temperature annealing of neutron induced reverse current and corresponding defect levels in low and high resistivity silicon detectors", IEEE Trans. NS, 42, pp. 387-393, 1995.
-
(1995)
IEEE Trans. NS
, vol.42
, pp. 387-393
-
-
Eremin, V.1
-
11
-
-
0030211485
-
eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations
-
eff reverse annealing effect using TSC/I-DLTS: relationship between neutron induced microscopic defects and silicon detector electrical degradations", Nucl. Instr. and Meth, A, 377, pp. 265-275, 1996.
-
(1996)
Nucl. Instr. and Meth, A
, vol.377
, pp. 265-275
-
-
Li, Z.1
-
12
-
-
0030169125
-
Self annealing effect on neutron irradiated silicon detectors by Hall effect analysis
-
U. Biggeri et al., "Self annealing effect on neutron irradiated silicon detectors by Hall effect analysis", IEEE Trans. NS, 43, pp. 1599-1604, 1995.
-
(1995)
IEEE Trans. NS
, vol.43
, pp. 1599-1604
-
-
Biggeri, U.1
-
13
-
-
0030168853
-
2
-
2", IEEE Trans. NS, 43, pp. 1590-1598, 1996.
-
(1996)
IEEE Trans. NS
, vol.43
, pp. 1590-1598
-
-
Li, Z.1
-
14
-
-
33747688046
-
-
diploma thesis, University of Hamburg
-
C. Osius, diploma thesis, University of Hamburg, 1995.
-
(1995)
-
-
Osius, C.1
-
15
-
-
0022502366
-
Development of large area silicon detectors
-
E. Fretwurst et al., "Development of large area silicon detectors", Nucl. Instr. and Meth. A, 253, pp. 467-477, 1987.
-
(1987)
Nucl. Instr. and Meth. A
, vol.253
, pp. 467-477
-
-
Fretwurst, E.1
-
17
-
-
33747683142
-
Analysis of TSC spectra measured on silicon pad detectors after exposure to fast neutrons
-
Proceedings of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy
-
H. Feick et al., "Analysis of TSC spectra measured on silicon pad detectors after exposure to fast neutrons", Proceedings of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy, 1996, to be published in NIM.
-
(1996)
NIM
-
-
Feick, H.1
-
18
-
-
0028400372
-
Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments
-
E. Fretwurst et al., "Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments", Nucl. Instr. and Meth. A, 342, pp. 119-125, 1994.
-
(1994)
Nucl. Instr. and Meth. A
, vol.342
, pp. 119-125
-
-
Fretwurst, E.1
-
19
-
-
21844525565
-
Observation of a bistable defect generated and activated by heat treatments in irradiated high resistivity silicon detectors
-
M. Moll et al., "Observation of a bistable defect generated and activated by heat treatments in irradiated high resistivity silicon detectors", Nucl. Phys. B (Proc. Suppl.), 44, pp. 468-474, 1995.
-
(1995)
Nucl. Phys. B (Proc. Suppl.)
, vol.44
, pp. 468-474
-
-
Moll, M.1
-
20
-
-
33747725518
-
Investigation of damage induced defects in silicon by TCT
-
Proceedings of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy
-
E. Fretwurst et al., "Investigation of damage induced defects in silicon by TCT", Proceedings of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy, 1996, to be published in NIM.
-
(1996)
NIM
-
-
Fretwurst, E.1
-
21
-
-
33646579197
-
The oxygen donor effect in silicon
-
J.L. Benton et al., "The oxygen donor effect in silicon", Physica, 116B, pp. 271-275, 1983.
-
(1983)
Physica
, vol.116 B
, pp. 271-275
-
-
Benton, J.L.1
-
22
-
-
0038651824
-
Configurational metastability of carbon-phosphorus pair defects in silicon
-
E. Gürer et al., "Configurational metastability of carbon-phosphorus pair defects in silicon", Material Science Forum, 83-87, pp. 339-344, 1992.
-
(1992)
Material Science Forum
, vol.83-87
, pp. 339-344
-
-
Gürer, E.1
-
23
-
-
0030216403
-
Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons, and pions
-
H. Feick et al., "Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons, and pions", Nucl. Instr. and Meth. A, 377, pp. 217-223, 1996.
-
(1996)
Nucl. Instr. and Meth. A
, vol.377
, pp. 217-223
-
-
Feick, H.1
-
24
-
-
0001499388
-
Lifetime in proton irradiated silicon
-
A. Hallén et al., "Lifetime in proton irradiated silicon", J. Appl. Phys., 79, pp. 3906-3914, 1996.
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 3906-3914
-
-
Hallén, A.1
-
25
-
-
0000238429
-
Intrinsic concentration, effective densities of states, and effective mass in silicon
-
M.A. Green, "Intrinsic concentration, effective densities of states, and effective mass in silicon", J. Appl. Phys., 67, pp. 2944-2954, 1990.
-
(1990)
J. Appl. Phys.
, vol.67
, pp. 2944-2954
-
-
Green, M.A.1
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