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Volumn 439, Issue 2, 2000, Pages 310-318
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Impact of the divacancy (?) on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTATIONAL METHODS;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRIC CURRENTS;
MATHEMATICAL MODELS;
PROTON IRRADIATION;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR DOPING;
GENERATION/RECOMBINATION PROPERTIES;
SEMICONDUCTOR DETECTORS;
SHOCKLEY-READ-HALL THEORY;
PARTICLE DETECTORS;
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EID: 0033890293
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-9002(99)00915-8 Document Type: Article |
Times cited : (13)
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References (24)
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