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Volumn 439, Issue 2, 2000, Pages 310-318

Impact of the divacancy (?) on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; MATHEMATICAL MODELS; PROTON IRRADIATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

EID: 0033890293     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00915-8     Document Type: Article
Times cited : (13)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.