Time-Dependent Dielectric Breakdown of 4H-SiC/SiO2 MOS Capacitors

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 4, 2008, Pages 635-641

  Gurfinkel, Moshe ^a   Shapira, Yoram ^a   Horst, Justin C ^b   Suehle, John S ^b   Bernstein, Joseph B ^c   Matocha, Kevin S ^d   Dunne, Greg ^e   Beaupre, Richard A ^e  

^a TEL AVIV UNIVERSITY   (Israel)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c BAR ILAN UNIVERSITY   (Israel)

^d UNIVERSITY OF MARYLAND   (United States)

^e GE GLOBAL RESEARCH   (United States)

Author keywords

4H silicon carbide (SiC) MOS capacitors; Reliability; time dependent dielectric breakdown (TDDB)

Indexed keywords

EID: 85008023628     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2008.2001182     Document Type: Article

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