Reliability of high voltage 4H-SiC MOSFET devices

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 401-406

  Krishnaswami, Sumi ^a   Ryu, Sei Hyung ^a   Heath, Bradley ^a   Agarwal, Anant ^a   Palmour, John ^a   Lelis, Aivars ^b   Scozzie, Charles ^b   Scofield, James ^c  

^a Arkansas Power Electronics International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; SILICON CARBIDE; STABILITY;

4H-SIC MOSFET; GATE VOLTAGE; REVERSE BIAS TESTING; REVERSE LEAKAGE CURRENT;

MOSFET DEVICES;

EID: 33750379224     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b13-01     Document Type: Conference Paper

References (5)

1. S-H. Ryu, S. Krishnaswami, B. Hull, B. Heath, M. Das, J. Richmond, A. Agarwal, J. Palmour, J. Scofield, presented at ICSCRM in Pittsburgh, PA, 2005.
2. A.K. Agarwal, S. Seshadri, L.B. Roland, IEEE Elec. Dev. Letters, Vol. 18, 1997, 592-594.
3. S. Krishnaswami, M. Das, B. Hull, S-H. Ryu, J. Scofield, A. Agarwal, J. Palmour, IEEE International Reliability Physics Symposium (IRPS), 2005, pp. 592-593.
4. M. Maranowski, J. Cooper, IEEE Trans. Electron Devices, Vol. 46, 1999, pp. 520-524.
5. S. Krishnaswami, M. K. Das, A. K. Agarwal and J. Palmour, Mat. Res. Soc. Symp. Proc., Vol. 815, 2004, pp. 205-210.