Radiation-induced back channel leakage in 60 MeV-proton-irradiated 0.10 μm-CMOS Partially Depleted SOI MOSFETs

European Space Agency, (Special Publication) ESA SP

Volumn 2003-September, Issue , 2003, Pages 425-432

  Raff, J M ^a   Mercha, A ^a   Simoen, E ^a   Claeys, C ^a,b   Mohammadzadeh, A ^c  

^a Level 6   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

Buried oxide; Floating body effects; Proton irradiation; Radiation effects; Silicon on insulator (SOI); Switch off transient; Total dose effects; Transconductance peak

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; IRRADIATION; MOS DEVICES; PROTON IRRADIATION; RADIATION; RADIATION EFFECTS; RECONFIGURABLE HARDWARE; SILICON ON INSULATOR TECHNOLOGY; SPACE APPLICATIONS; TRANSCONDUCTANCE;

BURIED OXIDES; FLOATING BODY EFFECT; SILICON-ON- INSULATORS (SOI); SWITCH OFF TRANSIENT; TOTAL DOSE EFFECT; TRANSCONDUCTANCE PEAK;

MOSFET DEVICES;

EID: 84995663205     PISSN: 03796566     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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