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Volumn 3, Issue 3, 2016, Pages

Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide

Author keywords

Low frequency noise; Multilevel memory; Resistive switching memory; Two dimensional nanomaterials

Indexed keywords

CHARGE TRAPPING; GRAPHENE; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NANOSHEETS; NANOSTRUCTURED MATERIALS; SWITCHING;

EID: 84992374832     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/3/3/034002     Document Type: Article
Times cited : (79)

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