-
3
-
-
0002713766
-
Electronic conduction through thin insulating films
-
chapter 14 New York, NY, USA McGraw-Hill
-
Simmons J. G., Maissel L., Glang R., Electronic conduction through thin insulating films. Handbook of Thin Film Technology 1970 chapter 14 New York, NY, USA McGraw-Hill
-
(1970)
Handbook of Thin Film Technology
-
-
Simmons, J.G.1
Maissel, L.2
Glang, R.3
-
7
-
-
0012537372
-
The nature of electronic conduction in thin insulating films
-
1st Amsterdam, The Netherlands Elsevier Science, North Holland
-
Hesto P., Barbottin G., Vapaille A., The nature of electronic conduction in thin insulating films. Instabilities in Silicon Devices: Silicon Passivation and Related Instabilities 1986 1st Amsterdam, The Netherlands Elsevier Science, North Holland
-
(1986)
Instabilities in Silicon Devices: Silicon Passivation and Related Instabilities
-
-
Hesto, P.1
Barbottin, G.2
Vapaille, A.3
-
10
-
-
84857947146
-
The application of high-dielectric-constant and ferroelectric thin filmsin integrated circuit technology
-
Stevenson Ranch, Calif, USA American Scientific Publishers
-
Lee J. Y. M., Chiu F. C., Juan P. C., Tseng T. Y., Nalwa H. S., The application of high-dielectric-constant and ferroelectric thin filmsin integrated circuit technology. Handbook of Nanoceramics and Their Based Nanodevices 2009 4 Stevenson Ranch, Calif, USA American Scientific Publishers
-
(2009)
Handbook of Nanoceramics and Their Based Nanodevices
, vol.4
-
-
Lee, J.Y.M.1
Chiu, F.C.2
Juan, P.C.3
Tseng, T.Y.4
Nalwa, H.S.5
-
11
-
-
77956985716
-
Optical and electrical characterizations of cerium oxide thin films
-
075104
-
Chiu F. C., Lai C. M., Optical and electrical characterizations of cerium oxide thin films. Journal of Physics D 2010 43 7 5 075104
-
(2010)
Journal of Physics D
, vol.43
, Issue.7
, pp. 5
-
-
Chiu, F.C.1
Lai, C.M.2
-
12
-
-
0035395857
-
Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction-and valence-band electron and hole tunneling
-
DOI 10.1109/16.930653, PII S0018938301053266
-
Lee W.-C., Hu C., Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction-and valence-band electron and hole tunneling. IEEE Transactions on Electron Devices 2001 48 7 1366 1373 2-s2.0-0035395857 10.1109/16.930653 (Pubitemid 32644578)
-
(2001)
IEEE Transactions on Electron Devices
, vol.48
, Issue.7
, pp. 1366-1373
-
-
Lee, W.-C.1
Hu, C.2
-
13
-
-
13644278163
-
2/Si structure
-
DOI 10.1063/1.1846131, 034506
-
2/Si structure. Journal of Applied Physics 2005 97 3 4 2-s2.0-13644278163 10.1063/1.1846131 034506 (Pubitemid 40232279)
-
(2005)
Journal of Applied Physics
, vol.97
, Issue.3
, pp. 0345061-0345064
-
-
Chiu, F.-C.1
Lin, Z.-H.2
Chang, C.-W.3
Wang, C.-C.4
Chuang, K.-F.5
Huang, C.-Y.6
Lee, J.Y.-M.7
Hwang, H.-L.8
-
14
-
-
4944263228
-
Richardson-schottky effect in solids
-
2-s2.0-4944263228 10.1103/PhysRevLett.15.967
-
Simmons J. G., Richardson-schottky effect in solids. Physical Review Letters 1965 15 25 967 968 2-s2.0-4944263228 10.1103/PhysRevLett.15.967
-
(1965)
Physical Review Letters
, vol.15
, Issue.25
, pp. 967-968
-
-
Simmons, J.G.1
-
15
-
-
0001574075
-
The electronic conduction mechanism in barium strontium titanate thin films
-
DOI 10.1063/1.122827, PII S0003695198006500
-
Zafar S., Jones R. E., Jiang B., White B., Kaushik V., Gillespie S., The electronic conduction mechanism in barium strontium titanate thin films. Applied Physics Letters 1998 73 24 3533 3535 2-s2.0-0001574075 10.1063/1.122827 (Pubitemid 128677455)
-
(1998)
Applied Physics Letters
, vol.73
, Issue.24
, pp. 3533-3535
-
-
Zafar, S.1
Jones, R.E.2
Jiang, B.3
White, B.4
Kaushik, V.5
Gillespie, S.6
-
16
-
-
33845795718
-
Interface characterization and carrier transportation in metal/ Hf O2 /silicon structure
-
DOI 10.1063/1.2401657
-
2/silicon structure. Journal of Applied Physics 2006 100 11 5 2-s2.0-33845795718 10.1063/1.2401657 114102 (Pubitemid 46012210)
-
(2006)
Journal of Applied Physics
, vol.100
, Issue.11
, pp. 114102
-
-
Chiu, F.-C.1
-
18
-
-
0001211315
-
Analytic model of direct tunnel current through ultrathin gate oxides
-
2-s2.0-0001211315
-
Khairurrijal K., Mizubayashi W., Miyazaki S., Hirose M., Analytic model of direct tunnel current through ultrathin gate oxides. Journal of Applied Physics 2000 87 6 3000 3005 2-s2.0-0001211315
-
(2000)
Journal of Applied Physics
, vol.87
, Issue.6
, pp. 3000-3005
-
-
Khairurrijal, K.1
Mizubayashi, W.2
Miyazaki, S.3
Hirose, M.4
-
19
-
-
0037349764
-
Enhancement of the effective tunnel mass in ultrathin silicon dioxide layers
-
2-s2.0-0037349764 10.1063/1.1541107
-
Städele M., Sacconi F., Di Carlo A., Lugli P., Enhancement of the effective tunnel mass in ultrathin silicon dioxide layers. Journal of Applied Physics 2003 93 5 2681 2690 2-s2.0-0037349764 10.1063/1.1541107
-
(2003)
Journal of Applied Physics
, vol.93
, Issue.5
, pp. 2681-2690
-
-
Städele, M.1
Sacconi, F.2
Di Carlo, A.3
Lugli, P.4
-
20
-
-
0001719706
-
Thickness and effective electron mass measurements for thin silicon dioxide films using tunneling current oscillations
-
Brar B., Wilk G. D., Seabaugh A. C., Thickness and effective electron mass measurements for thin silicon dioxide films using tunneling current oscillations. Applied Physics Letters 1995 67 7 1031 1033
-
(1995)
Applied Physics Letters
, vol.67
, Issue.7
, pp. 1031-1033
-
-
Brar, B.1
Wilk, G.D.2
Seabaugh, A.C.3
-
21
-
-
0000722083
-
2 gate oxides from microscopic models
-
DOI 10.1063/1.1330764
-
2 gate oxides from microscopic models. Journal of Applied Physics 2001 89 1 348 363 2-s2.0-0000722083 10.1063/1.1330764 (Pubitemid 33703386)
-
(2001)
Journal of Applied Physics
, vol.89
, Issue.1
, pp. 348-363
-
-
Stadele, M.1
Tuttle, B.R.2
Hess, K.3
-
22
-
-
79956033267
-
Direct tunneling leakage current and scalability of alternative gate dielectrics
-
2-s2.0-79956033267 10.1063/1.1506941
-
Yeo Y.-C., King T.-J., Hu C., Direct tunneling leakage current and scalability of alternative gate dielectrics. Applied Physics Letters 2002 81 11 2091 2093 2-s2.0-79956033267 10.1063/1.1506941
-
(2002)
Applied Physics Letters
, vol.81
, Issue.11
, pp. 2091-2093
-
-
Yeo, Y.-C.1
King, T.-J.2
Hu, C.3
-
23
-
-
65249178862
-
3/oxynitride laminated gate dielectrics
-
2-s2.0-65249178862 10.1063/1.3103282 074103
-
3/oxynitride laminated gate dielectrics. Journal of Applied Physics 2009 105 7 4 2-s2.0-65249178862 10.1063/1.3103282 074103
-
(2009)
Journal of Applied Physics
, vol.105
, Issue.7
, pp. 4
-
-
Chiu, F.-C.1
Lee, C.-Y.2
Pan, T.-M.3
-
24
-
-
0018035054
-
Electrical and charge storage characteristics of the tantalum oxide-silicon dioxide device
-
2-s2.0-0018035054
-
Angle R. L., Talley H. E., Electrical and charge storage characteristics of the tantalum oxide-silicon dioxide device. IEEE Transactions on Electron Devices 1978 25 11 1277 1283 2-s2.0-0018035054
-
(1978)
IEEE Transactions on Electron Devices
, vol.25
, Issue.11
, pp. 1277-1283
-
-
Angle, R.L.1
Talley, H.E.2
-
25
-
-
84864231122
-
Conduction mechanism of resistive switching films in MgO memory devices
-
094104
-
Chiu F. C., Shih W. C., Feng J. J., Conduction mechanism of resistive switching films in MgO memory devices. Journal of Applied Physics 2012 111 9 5 094104
-
(2012)
Journal of Applied Physics
, vol.111
, Issue.9
, pp. 5
-
-
Chiu, F.C.1
Shih, W.C.2
Feng, J.J.3
-
26
-
-
78649340782
-
Resistive random access memory (ReRAM) based on metal oxides
-
2-s2.0-78649340782 10.1109/JPROC.2010.2070830
-
Akinaga H., Shima H., Resistive random access memory (ReRAM) based on metal oxides. Proceedings of the IEEE 2010 98 12 2237 2251 2-s2.0-78649340782 10.1109/JPROC.2010.2070830
-
(2010)
Proceedings of the IEEE
, vol.98
, Issue.12
, pp. 2237-2251
-
-
Akinaga, H.1
Shima, H.2
-
27
-
-
43549126477
-
Resistive switching in transition metal oxides
-
DOI 10.1016/S1369-7021(08)70119-6, PII S1369702108701196
-
Sawa A., Resistive switching in transition metal oxides. Materials Today 2008 11 6 28 36 2-s2.0-43549126477 10.1016/S1369-7021(08)70119-6 (Pubitemid 351680723)
-
(2008)
Materials Today
, vol.11
, Issue.6
, pp. 28-36
-
-
Sawa, A.1
-
28
-
-
67650102619
-
Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges
-
2-s2.0-67650102619 10.1002/adma.200900375
-
Waser R., Dittmann R., Staikov C., Szot K., Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges. Advanced Materials 2009 21 25-26 2632 2663 2-s2.0-67650102619 10.1002/adma.200900375
-
(2009)
Advanced Materials
, vol.21
, Issue.25-26
, pp. 2632-2663
-
-
Waser, R.1
Dittmann, R.2
Staikov, C.3
Szot, K.4
-
29
-
-
84859376367
-
Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films
-
178 2-s2.0-84859376367 10.1186/1556-276X-7-178
-
Chiu F.-C., Li P.-W., Chang W.-Y., Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films. Nanoscale Research Letters 2012 7 9 178 2-s2.0-84859376367 10.1186/1556-276X-7-178
-
(2012)
Nanoscale Research Letters
, vol.7
, pp. 9
-
-
Chiu, F.-C.1
Li, P.-W.2
Chang, W.-Y.3
-
31
-
-
34948903920
-
Schottky contact on a ZnO (0001) single crystal with conducting polymer
-
DOI 10.1063/1.2789697
-
Nakano M., Tsukazaki A., Gunji R. Y., Ueno K., Ohtomo A., Fukumura T., Kawasaki M., Schottky contact on a ZnO (0001) single crystal with conducting polymer. Applied Physics Letters 2007 91 14 3 2-s2.0-34948903920 10.1063/1.2789697 142113 (Pubitemid 47531512)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.14
, pp. 142113
-
-
Nakano, M.1
Tsukazaki, A.2
Gunji, R.Y.3
Ueno, K.4
Ohtomo, A.5
Fukumura, T.6
Kawasaki, M.7
-
32
-
-
20944450556
-
Electrical conduction mechanisms of metal La2 O3 Si structure
-
DOI 10.1063/1.1896435, 103503
-
3 Si structure. Journal of Applied Physics 2005 97 10 5 2-s2.0-20944450556 10.1063/1.1896435 103503 (Pubitemid 40866040)
-
(2005)
Journal of Applied Physics
, vol.97
, Issue.10
, pp. 1-5
-
-
Chiu, F.-C.1
Chou, H.-W.2
Lee, J.Y.-M.3
-
33
-
-
34548425156
-
Electrical characterization and current transportation in metal Dy2 O3 Si structure
-
DOI 10.1063/1.2767380
-
3 Si structure. Journal of Applied Physics 2007 102 4 5 2-s2.0-34548425156 10.1063/1.2767380 044116 (Pubitemid 47352459)
-
(2007)
Journal of Applied Physics
, vol.102
, Issue.4
, pp. 044116
-
-
Chiu, F.-C.1
-
34
-
-
0033882515
-
3 thin film capacitors for memory device applications
-
DOI 10.1149/1.1393194
-
3 thin film capacitors for memory device applications. Journal of the Electrochemical Society 2000 147 1 326 329 2-s2.0-0033882515 10.1149/1.1393194 (Pubitemid 30551924)
-
(2000)
Journal of the Electrochemical Society
, vol.147
, Issue.1
, pp. 326-329
-
-
Kundu, T.K.1
Lee, J.Y.-M.2
|