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Volumn 28, Issue 37, 2016, Pages 8240-8247

Isoelectronic Tungsten Doping in Monolayer MoSe2for Carrier Type Modulation

(15) Li, Xufan a Lin, Ming Wei a Basile, Leonardo b Hus, Saban M a Puretzky, Alexander A a Lee, Jaekwang c Kuo, Yen Chien d Chang, Lo Yueh d Wang, Kai a Idrobo, Juan C a Li, An Ping a Chen, Chia Hao d Rouleau, Christopher M a Geohegan, David B a Xiao, Kai a

a OAK RIDGE NATIONAL LABORATORY (United States)

b ESCUELA POLITÉCNICA NACIONAL (Ecuador)

c Pusan National University (South Korea)

d NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER (Taiwan)

Author keywords

alloys; carrier type modulation; isoelectronic; Mo1 xWxSe2; p n homojunctions

Indexed keywords

ALLOYING; CRYSTALS; ELECTRIC RECTIFIERS; MODULATION; MOLYBDENUM OXIDE; TUNGSTEN; TUNGSTEN COMPOUNDS;

COMPOSITION MODULATIONS; CURRENT RECTIFICATIONS; HOMO-JUNCTIONS; ISOELECTRONIC; ISOELECTRONIC ALLOYING; MO1-XWXSE2; MONOLAYER CRYSTALS; SUBSTITUTIONAL ALLOYS;

MONOLAYERS;

EID: 84989812457 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201601991 Document Type: Article

Times cited : (95)

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