Graphene as tunable transparent electrode material on GaN: Layer-number-dependent optical and electrical properties

Applied Physics Letters

Volumn 103, Issue 8, 2013, Pages

  Shiu, Hung Wei ^a,b   Chang, Lo Yueh ^a,b   Lee, Kai Hsuan ^a   Chen, Hung Ying ^b   Gwo, Shangjr ^b   Chen, Chia Hao ^a  

^a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GAN-BASED LIGHT-EMITTING DIODES; INTRINSIC PROPERTY; MICRO-RAMAN SPECTRA; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL AND ELECTRONIC PROPERTIES; SCHOTTKY BARRIER HEIGHTS; TRANSPARENT ELECTRODE; TRANSPARENT ELECTRODE MATERIALS;

ELECTRONIC PROPERTIES; GALLIUM NITRIDE; GRAPHENE; LIGHT EMITTING DIODES;

ELECTRIC PROPERTIES;

EID: 84883382001     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818787     Document Type: Article

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