Twisted MoSe2 Bilayers with Variable Local Stacking and Interlayer Coupling Revealed by Low-Frequency Raman Spectroscopy

ACS Nano

Volumn 10, Issue 2, 2016, Pages 2736-2744

  Puretzky, Alexander A ^a   Liang, Liangbo ^a   Li, Xufan ^a   Xiao, Kai ^a   Sumpter, Bobby G ^a   Meunier, Vincent ^b   Geohegan, David B ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b Rensselaer Polytechnic Institute   (United States)

Author keywords

first principles calculations; low frequency Raman spectroscopy; stacking configurations; transition metal dichalcogenides; two dimensional materials

Indexed keywords

CALCULATIONS; MONOLAYERS; RAMAN SPECTROSCOPY;

FIRST-PRINCIPLES CALCULATION; LOW-FREQUENCY RAMAN SPECTROSCOPY; STACKING CONFIGURATIONS; TRANSITION METAL DICHALCOGENIDES; TWO-DIMENSIONAL MATERIALS;

TRANSITION METALS;

EID: 84960157562     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b07807     Document Type: Article

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