Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer

Nature Communications

Volumn 6, Issue , 2015, Pages

  Song, Jeong Gyu ^a   Ryu, Gyeong Hee ^b   Lee, Su Jeong ^a   Sim, Sangwan ^a   Lee, Chang Wan ^a   Choi, Taejin ^a   Jung, Hanearl ^a   Kim, Youngjun ^a   Lee, Zonghoon ^b   Myoung, Jae Min ^a   Dussarrat, Christian ^c   Lansalot Matras, Clement ^c   Park, Jusang ^a   Choi, Hyunyong ^a   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

^b Ulsan National Institute of Science and Technology   (South Korea)

^c AIR LIQUIDE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; DISULFIDE; MOLYBDENUM; TUNGSTEN;

ALLOY; MIXING; MOLYBDENUM; PHOTOCHEMISTRY; RAMAN SPECTROSCOPY; TUNGSTEN; TWO-DIMENSIONAL MODELING; ULTRAVIOLET RADIATION; VISIBLE SPECTRUM; X-RAY SPECTROSCOPY;

ARTICLE; ATOM; ATOMIC FORCE MICROSCOPY; CHEMICAL COMPOSITION; CONTROLLED STUDY; FLAME PHOTOMETRY; FOURIER TRANSFORMATION; HIGH TEMPERATURE; LIGHT ABSORPTION; LOW TEMPERATURE; MICROSCOPY; RAMAN SPECTROMETRY; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; SYNTHESIS; THICKNESS; ULTRAVIOLET SPECTROPHOTOMETRY; VAPORIZATION; X RAY SPECTROMETRY;

EID: 84937864917     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms8817     Document Type: Article

References (50)

1. Bernardi, M. et al. Extraordinary sunlight absorption and 1 nm-thick photovoltaics using two-dimensional monolayer materials. Nano Lett. 13, 3664-3670 (2013).
2. Wang, Q. H. et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699-712 (2012).
3. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263-275 (2013).
4. Eda, G. et al. Photoluminescence from chemically exfoliated MoS2. Nano Lett. 11, 5111-5116 (2011).
5. Mak, K. et al. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
6. Lee, H. S. et al. MoS2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 12, 3695-3700 (2012).
7. Liu, H. et al. Vapor-phase growth and characterization of Mo1-xWxS2 (0rxr1) atomic layers on 2-inch sapphire substrates. Nanoscale 6, 624-629 (2014).
8. Chen, Y. et al. Composition-dependent raman modes of Mo1-xWxS2 monolayer alloys. Nanoscale 6, 2833-2839 (2014).
9. Chen, Y. et al. Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys. ACS Nano 7, 4610-4616 (2013).
10. Wei, X.-L. et al. Modulating the atomic and electronic structures through alloying and heterostructure of single-layer MoS2. J. Mater. Chem. A 2, 2101-2109 (2014).
11. Feng, Q. et al. Growth of large-area 2D MoS2(1-x)Se2x semiconductor alloys. Adv. Mater. 26, 2648-2653 (2014).
12. Xi, J. et al. Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: a first-principles prediction. J. Phys. Chem. Lett. 5, 285-291 (2013).
13. Lin, Z. et al. Facile synthesis of MoS2 and MoxW1-xS2 triangular monolayers. APL Mater. 2, 092514 (2014).
14. Tannous, J. et al. Synthesis and tribological performance of novel MoxW1-xS2 (0 r x r 1) inorganic fullerenes. Tribol. Lett. 37, 83-92 (2010).
15. Yu, Y. et al. Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and non-epitaxial MoS2/WS2 heterostructures. Nano Lett. 15, 486-491 (2015).
16. Hong, X. et al. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures. Nat. Nanotechnol. 9, 682-686 (2014).
17. Kos?mider, K. et al. Electronic properties of the MoS2-WS2 heterojunction. Phys. Rev. B 87, 075451 (2013).
18. Huo, N. et al. Novel and enhanced optoelectronic performances of multilayer MoS2-WS2 heterostructure transistors. Adv. Funct. Mater. 24, 7025-7031 (2014).
19. Jung, Y. et al. Chemically synthesized heterostructures of two-dimensional molybdenum/tungsten-based dichalcogenides with vertically aligned layers. ACS Nano 8, 9550-9557 (2014).
20. Cheng, R. et al. Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunctionpn diodes. Nano Lett. 14, 5590-5597 (2014).
21. Tongay, S. et al. Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 monolayers. Nano Lett. 14, 3185-3190 (2014).
22. Terrones, H., Lopez-Uras, F. , Terrones, M. Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides. Sci. Rep. 3, 1549 (2013).
23. Gong, Y. et al. Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide. Nano Lett. 14, 442-449 (2013).
24. Hyungjun, K. Characteristics and applications of plasma enhanced-atomic layer deposition. Thin Solid Films 519, 6639-6644 (2011).
25. Kim, H. et al. Applications of atomic layer deposition to nanofabrication and emerging nanodevices. Thin Solid Films 517, 2563-2580 (2009).
26. Lee, J.-S. et al. Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric. Appl. Surf. Sci. 297, 16-21 (2014).
27. Nam, T. et al. Growth characteristics and properties of Ga-doped ZnO(GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition. Appl. Surf. Sci. 295, 260-265 (2014).
28. Kim, W. H. et al. Significant enhancement of the dielectric constant through the doping of CeO2 into HfO2 by atomic layer deposition. J. Am. Ceram. Soc. 97, 1164-1169 (2014).
29. Brahim, C. et al. ZrO2-In2O3 thin layers with gradual ionic to electronic composition synthesized by atomic layer deposition for SOFC applications. J. Mater. Chem. 19, 760-766 (2009).
30. Song, J.-G. et al. Layer-controlled, wafer-scale, and conformal synthesis of tungsten disulfide nanosheets using atomic layer deposition. ACS Nano 7, 11333-11340 (2013).
31. Blackburn, P. E. et al. The vaporization of molybdenum and tungsten oxides. J. Phys. Chem. 62, 769-773 (1958).
32. Gutie?rrez, H. R. et al. Extraordinary room-temperature photoluminescence in triangular WS2 monolayers. Nano Lett. 13, 3447-3454 (2013).
33. Lin, Y.-C. et al. Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization. Nanoscale 4, 6637-6641 (2012).
34. Terrones, H. et al. New first order Raman-active modes in few layered transition metal dichalcogenides. Sci. Rep. 4, 4215 (2014).
35. Li, S.-L. et al. Quantitative raman spectrum and reliable thickness identification for atomic layers on insulating substrates. ACS Nano 6, 7381-7388 (2012).
36. Li, H. et al. From bulk to monolayer MoS2: evolution of Raman scattering. Adv. Funct. Mater. 22, 1385-1390 (2012).
37. Ling, X. et al. Role of the seeding promoter in MoS2 growth by chemical vapor deposition. Nano Lett. 14, 464-472 (2014).
38. Schmidt, H. et al. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett. 14, 1909-1913 (2014).
39. Yu, Y. et al. Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films. Sci. Rep. 3, 1866 (2013).
40. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
41. Lee, Y. et al. Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor. Nanoscale 6, 2821-2826 (2014).
42. Van Vechten, J. et al. Electronic structures of semiconductor alloys. Phys. Rev. B 1, 3351 (1970).
43. Yin, W.-J. et al. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in the SnxGe1-x alloys. Phys. Rev. B 78, 161203 (2008).
44. Dumcenco, D. O. et al. Visualization and quantification of transition metal atomic mixing in Mo1-xWxS2 single layers. Nat. Commun. 4, 1351 (2013).
45. Garcia, A. et al. Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging. Ultramicroscopy 146, 33-38 (2014).
46. Elas, A. L. et al. Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers. ACS Nano 7, 5235-5242 (2013).
47. Gong, Y. et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 13, 1135-1142 (2014).
48. Chiu, M.-H. et al. Spectroscopic signatures for interlayer coupling in MoS2-WSe2 van der Waals stacking. ACS Nano 8, 9649-9656 (2014).
49. Lin, Q. et al. Efficient light absorption with integrated nanopillar/nanowell arrays for three-dimensional thin-film photovoltaic applications. ACS Nano 7, 2725-2732 (2013).
50. Aydin, K. et al. Broadband polarization-independent resonant light absorption using ultrathin plasmonic super absorbers. Nat. Commun. 2, 517 (2011).