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Volumn 28, Issue 44, 2016, Pages 9735-9743

Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

Author keywords

band structure; chemical vapor deposition; electronic properties; monolayer transition metal dichalcogenides; transition metal doping

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; NIOBIUM; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; TUNGSTEN COMPOUNDS;

EID: 84988442712     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201601104     Document Type: Article
Times cited : (252)

References (50)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.