Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations

ACS Nano

Volumn 9, Issue 6, 2015, Pages 6333-6342

  Puretzky, Alexander A ^a   Liang, Liangbo ^b   Li, Xufan ^a   Xiao, Kai ^a   Wang, Kai ^a   Mahjouri Samani, Masoud ^a   Basile, Leonardo ^c   Idrobo, Juan Carlos ^a   Sumpter, Bobby G ^a   Meunier, Vincent ^b   Geohegan, David B ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c ESCUELA POLITÉCNICA NACIONAL   (Ecuador)

Author keywords

first principles calculations; low frequency Raman spectroscopy; stacking configurations; transition metal dichalcogenides; two dimensional materials

Indexed keywords

ATOMS; CALCULATIONS; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; GROUP THEORY; SCANNING ELECTRON MICROSCOPY; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY;

FIRST-PRINCIPLES CALCULATION; LOW-FREQUENCY RAMAN SPECTROSCOPY; STACKING CONFIGURATIONS; TRANSITION METAL DICHALCOGENIDES; TWO-DIMENSIONAL MATERIALS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 84934892656     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b01884     Document Type: Article

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