Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

2D Materials

Volumn 3, Issue 2, 2016, Pages

  Xu, Shuigang ^a   Wu, Zefei ^a   Lu, Huanhuan ^a   Han, Yu ^a   Long, Gen ^a   Chen, Xiaolong ^a   Han, Tianyi ^a   Ye, Weiguang ^a   Wu, Yingying ^a   Lin, Jiangxiazi ^a   Shen, Junying ^a   Cai, Yuan ^a   He, Yuheng ^a   Zhang, Fan ^b   Lortz, Rolf ^a   Cheng, Chun ^c   Wang, Ning ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Contact resistance; Field effect transistor; H BN encapsulation; Quantum oscillations; Transition metal dichalcogenides

Indexed keywords

CARRIER MOBILITY; CONTACT RESISTANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTORS; ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; III-V SEMICONDUCTORS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; OHMIC CONTACTS; QUANTUM ELECTRONICS; TEMPERATURE; TRANSITION METALS; TUNGSTEN COMPOUNDS;

ELECTRICAL CONTACT RESISTANCE; ELECTRON BEAM EVAPORATION; FIELD-EFFECT MOBILITIES; HALL EFFECT MEASUREMENT; HIGH CARRIER MOBILITY; QUANTUM OSCILLATIONS; SHUBNIKOV DE-HAAS OSCILLATION; TRANSITION METAL DICHALCOGENIDES;

QUANTUM CHEMISTRY;

EID: 84977619527     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/3/2/021007     Document Type: Article

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