Large-Area Deposition of MoS2 by Pulsed Laser Deposition with in Situ Thickness Control

ACS Nano

Volumn 10, Issue 6, 2016, Pages 6054-6061

  Serna, Martha I ^a   Yoo, Seong H ^d   Moreno, Salvador ^b,c   Xi, Yang ^a   Oviedo, Juan Pablo ^a   Choi, Hyunjoo ^d   Alshareef, Husam N ^e   Kim, Moon J ^a   Minary Jolandan, Majid ^b,c   Quevedo Lopez, Manuel A ^a  

^a Materials Science and Engineering Department   (United States)

^b Department of Mechanical Engineering ^*  (United States)

^c UNIVERSITY OF TEXAS AT DALLAS   (United States)

^d Kookmin University   (South Korea)

^e KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

2D materials; electrical properties; engineered target; layered materials; MoS2; PLD; pulsed laser deposition

Indexed keywords

AMORPHOUS MATERIALS; ELECTRIC PROPERTIES; HAFNIUM OXIDES; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; PARTICLE SIZE; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; PULSED LASERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SILICA; SINGLE CRYSTALS; SUBSTRATES;

CATALYST-FREE METHOD; HIGH-RESOLUTION RUTHERFORD BACKSCATTERING SPECTROMETRY; LARGE-AREA DEPOSITION; LAYERED MATERIAL; MOLYBDENUM DISULFIDE; MOS2; SUBSTRATE HOLDERS; SURFACE PREPARATION;

SULFUR COMPOUNDS;

EID: 84976533803     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.6b01636     Document Type: Article

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