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Volumn 3, Issue 16, 2015, Pages 3842-3847

Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

(9) Xi, Yang a Serna, Martha Isabel a Cheng, Lanxia a Gao, Yang a Baniasadi, Mahmoud a Rodriguez Davila, Rodolfo a Kim, Jiyoung a Quevedo Lopez, Manuel A a Minary Jolandan, Majid a

a The University of Texas at Dallas (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DEPOSITION; ELECTRODES; HYDRATES; MOLYBDENUM COMPOUNDS; THIN FILMS;

CATALYTIC SURFACES; HYDRAZINE HYDRATE; MOLYBDENUM DISULFIDE; ONE-STEP PROCESS; SOLUTION-DEPOSITION METHOD; SOLUTION-PROCESSED; SOURCE AND DRAIN ELECTRODES; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS;

EID: 84927779540 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c5tc00062a Document Type: Article

Times cited : (42)

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