A systematic study of the synthesis of monolayer tungsten diselenide films on gold foil

Current Applied Physics

Volumn 16, Issue 9, 2016, Pages 1216-1222

  Yun, Seok Joon ^a   Kim, Soo Min ^b   Kim, Ki Kang ^c   Lee, Young Hee ^a  

^a Sungkyunkwan University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Dongguk University   (South Korea)

Author keywords

Chemical vapor deposition; Gold; Transition metal dichalcogenides; Tungsten diselenide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; FILM GROWTH; GOLD; GROWTH TEMPERATURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MONOLAYERS; PARTIAL PRESSURE; SELENIUM COMPOUNDS; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

CRYSTALLINITIES; GOLD SURFACES; GROWTH TIME; SOLID-PHASE; SYSTEMATIC STUDY; THICKNESS UNIFORMITY; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISELENIDE;

VAPOR DEPOSITION;

EID: 84966692493     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2016.02.010     Document Type: Article

References (45)

1. [1] Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Katsnelson, M.I., Grigorieva, I.V., Dubonos, S.V., Firsov, A.A., Two-dimensional gas of massless dirac fermions in graphene. Nature 438 (2005), 197–200.
2. [2] Kim, K.K., Hsu, A., Jia, X.T., Kim, S.M., Shi, Y.S., Hofmann, M., Nezich, D., Rodriguez-Nieva, J.F., Dresselhaus, M., Palacios, T., Kong, J., Synthesis of monolayer hexagonal boron nitride on cu foil using chemical vapor deposition. Nano Lett. 12 (2012), 161–166.
3. [3] Watanabe, K., Taniguchi, T., Kanda, H., Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal. Nat. Mater. 3 (2004), 404–409.
4. [4] Geim, A.K., Grigorieva, I.V., Van der Waals heterostructures. Nature 499 (2013), 419–425.
5. [5] Chhowalla, M., Shin, H.S., Eda, G., Li, L.J., Loh, K.P., Zhang, H., The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5 (2013), 263–275.
6. 2: a new direct-gap semiconductor. Phys. Rev. Lett., 105, 2010.
7. 2. Nano Lett. 14 (2014), 4592–4597.
8. 2x (x=0.41–1.00) monolayer alloys with controlled morphology by physical vapor deposition. ACS Nano 9 (2015), 7450–7455.
9. [9] Gong, Y.J., Liu, Z., Lupini, A.R., Shi, G., Lin, J.H., Najmaei, S., Lin, Z., Elias, A.L., Berkdemir, A., You, G., Terrones, H., Terrones, M., Vajtai, R., Pantelides, S.T., Pennycook, S.J., Lou, J., Zhou, W., Ajayan, P.M., Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide. Nano Lett. 14 (2014), 442–449.
10. [10] Chen, Y.F., Xi, J.Y., Dumcenco, D.O., Liu, Z., Suenaga, K., Wang, D., Shuai, Z.G., Huang, Y.S., Xie, L.M., Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys. ACS Nano 7 (2013), 4610–4616.
11. 2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band ap semiconductors. Eur. Phys. J. B 85 (2012), 1–7.
12. 2 atomic layers. Nano Lett. 15 (2015), 709–713.
13. 2 with tunable device characteristics and growth mechanism study. ACS Nano 9 (2015), 6119–6127.
14. 2. ACS Nano 7 (2013), 791–797.
15. 2 monolayers. Science 346 (2014), 1205–1208.
16. 2 p-FETs with chemically doped contacts. Nano Lett. 12 (2012), 3788–3792.
17. 2 field effect transistors. Nano Lett. 13 (2013), 1983–1990.
18. [18] Zeng, Z.Y., Sun, T., Zhu, J.X., Huang, X., Yin, Z.Y., Lu, G., Fan, Z.X., Yan, Q.Y., Hng, H.H., Zhang, H., An effective method for the fabrication of few-layer-thick inorganic nanosheets. Angew. Chem. Int. Ed. 51 (2012), 9052–9056.
19. 2 crystals on dielectric substrates. Adv. Mater. 27 (2015), 6722–6727.
20. 3 by selenium–oxygen ion exchange. 2D Mater., 2, 2015, 014003.
21. 2/Si substrate and its device applications. Nanoscale 7 (2015), 4193–4198.
22. 2 monolayers and device applications. ACS Nano 8 (2014), 923–930.
23. 2 grown via metal–organic chemical vapor deposition. ACS Nano 9 (2015), 2080–2087.
24. 2 on sapphire via a layer-over-layer growth mode. ACS Nano 8 (2015), 8368–8375.
25. 2 atomic layers with chemical vapor deposition. Adv. Mater. 24 (2012), 2320–2325.
26. 2 growth by chemical vapor deposition. Nano Lett. 14 (2014), 464–472.
27. [27] Zhang, X.Q., Lin, C.H., Tseng, Y.W., Huang, K.H., Lee, Y.H., Synthesis of lateral heterostructures of semiconducting atomic layers. Nano Lett. 15 (2015), 410–415.
28. [28] Han, G.H., Kybert, N.J., Naylor, C.H., Lee, B.S., Ping, J., Park, J.H., Kang, J., Lee, S.Y., Lee, Y.H., Agarwal, R., Johnson, A.T.C., Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations. Nat. Commun., 6, 2015, 6128.
29. [29] Yun, S.J., Chae, S.H., Kim, H., Park, J.C., Park, J.-H., Han, G.H., Lee, J.S., Kim, S.M., Oh, H.M., Seok, J., Jeong, M.S., Kim, K.K., Lee, Y.H., Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils. ACS Nano 9 (2015), 5510–5519.
30. 2 growth on Au foils and on-site domain boundary imaging. Adv. Funct. Mater. 25 (2015), 842–849.
31. 2 on Au foils and its potential application in hydrogen evolution reaction. ACS Nano 8 (2014), 10196–10204.
32. 2 nanosheets on Au foils toward direct application in hydrogen evolution. Nano Res., 2015, 1–10.
33. [33] Hunyadi, D., Sajo, I., Szilagyi, I.M., Structure and thermal decomposition of ammonium metatungstate. J. Therm. Anal. Calorim. 116 (2014), 329–337.
34. [34] Venables, D.S., Brown, M.E., Reduction of tungsten oxides with hydrogen and with hydrogen and carbon. Thermochim. Acta. 285 (1996), 361–382.
35. [35] Rabenau, A., Rau, H., Rosenstein, G., Phase relationships in the gold-selenium system. J. Less Common Metals 24 (1971), 291–299.
36. 2. Small 9 (2013), 1974–1981.
37. 2. Nanoscale 5 (2013), 9677–9683.
38. [38] Nath, S., Ghosh, S.K., Pal, T., Solution phase evolution of AuSe nanoalloys in Triton X-100 under UV-photoactivation. Chem. Commun., 2004, 966–967.
39. [39] Wu, C.X., Li, F.S., Chen, W., Veeramalai, C.P., Ooi, P.C., Guo, T.L., Electromagnetic induction heating for single crystal graphene growth: morphology control by rapid heating and quenching. Sci. Rep. U. K., 5, 2015, 9034.
40. 2 between 20 and 800 C. J. Appl. Crystallogr. 9 (1976), 403–406.
41. 2 monolayers. Appl. Mater., 2, 2014, 101101.
42. 2: a combined photoemission and inverse photoemission study. Phys. Rev. B 55 (1997), 10392–10399.
43. 2. Phys. Rev. Lett., 113, 2014.
44. 2 thin films with ultralow thermal conductivity. J. Mater. Res. 23 (2008), 1064–1067.
45. [45] Patel, P.R., Patel, H., Rathod, J., Patel, K., Pathak, V., Growth, structural and electrical characterization of tungsten diselenide crystals grown by DVT technique. Am. J. Condens. Matter Phys. 3 (2013), 13–20.