Large-Area synthesis of WSe2 from WO3 by selenium-oxygen ion exchange

2D Materials

Volumn 2, Issue 1, 2015, Pages

  Browning, Paul ^a   Eichfeld, Sarah ^a   Zhang, Kehao ^a   Hossain, Lorraine ^a   Lin, Yu Chuan ^a   Wang, Ke ^a   Lu, Ning ^b   Waite, A R ^c   Voevodin, A A ^d   Kim, Moon ^b   Robinson, Joshua A ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The University of Texas at Dallas   (United States)

^c UNIVERSAL TECHNOLOGY CORPORATION   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

2D synthesis; Tungsten diselenide; Tungsten oxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; ENERGY GAP; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION EXCHANGE; OXIDE FILMS; OXIDES; SELENIUM; TIME DOMAIN ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS;

2D SYNTHESIS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELECTRONIC APPLICATION; ELECTRONIC MATERIALS; LARGE AREA SYNTHESIS; LOW THERMAL CONDUCTIVITY; TUNGSTEN DISELENIDE; TUNGSTEN OXIDE;

SELENIUM COMPOUNDS;

EID: 84947923345     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/2/1/014003     Document Type: Article

References (45)

1. Wu Y, Farmer D, Xia F and Avouris P 2013 Graphene electronics: materials, devices, and circuits Proc. IEEE 101 1620-37
2. Geim AK and Novoselov KS 2007 The rise of graphene Nat. Mater. 6 183-91
3. MakKF, Lee C, Hone J, Shan J and Heinz T F 2010 Atomically thin MoS2: A new direct-gap semiconductor Phys. Rev. Lett. 105 136805
4. Splendiani A et al 2010 Emerging photoluminescence in monolayer MoS2 Nano Lett. 10 1271-5
5. GutiérrezHR et al 2013 Extraordinary room-temperature photoluminescence in triangularWS2 monolayers Nano Lett. 13 3447-54
6. ZengH et al 2013 Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides Sci. Rep. 3 1608
7. Xiao D, Liu G-B, Feng W, XuX and Yao W 2012 Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides Phys. Rev. Lett. 108 196802
8. Gong Z et al 2013 Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers Nat. Commun. 4 2053
9. Sahin H, Tongay S, Horzum S, Fan W, Zhou J, Li J, WuJ and Peeters FM 2013 Anomalous Raman spectra and thicknessdependent electronic properties of WSe2 Phys. Rev. B 87 165409
10. Late DJ, Liu B, Matte HS S R, Dravid VP and Rao CNR 2012 Hysteresis in single-layer MoS2 field effect transistors ACS Nano 6 5635-41
11. Wang X, Gong Y, Shi G, Chow W and Keyshar K 2014 Chemical vapor deposition growth of crystalline monolayer MoSe2 ACS Nano 8 5125-31
12. LiuW et al 2013 Role of metal contacts in designing highperformance monolayer n-type WSe2 field effect transistors Nano Lett. 13 1983-90
13. Baugher BWH, Churchill HOH, Yang Y and Jarillo-Herrero P 2014 Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide Nat. Nanotechnology 9 1-6
14. Fang X et al 2012 Lithium storage performance in ordered mesoporous MoS2 electrode material Microporous Mesoporous Mater. 151 418-23
15. Das S and Appenzeller J 2013 WSe2 field effect transistors with enhanced ambipolar characteristics Appl. Phys. Lett. 103 103501
16. Podzorov V, Gershenson ME, Kloc C, Zeis R and Bucher E 2004 High-mobility field-effect transistors based on transition metal dichalcogenides Appl. Phys. Lett. 84 3301
17. Jena D 2013 Tunneling transistors based on graphene and 2D crystals Proc. IEEE 101 1585-602
18. Gong C et al 2013 Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors Appl. Phys. Lett. 103 053513
19. ChiritescuC et al 2007 Ultralow thermal conductivity in disordered, layered WSe2 crystals Science 315 351-3
20. Klein A, Dolatzoglou P, Lux-SteinerM and Bucher E 1997 Influence of material synthesis and doping on the transport properties of WSe2 single crystals grown by selenium transport Sol. Energy Mater. Sol. Cells 46 175-86
21. Patel P, PatelH and Rathod J 2013 Growth, structural and electrical characterization of tungsten diselenide crystals grown by Dvt technique Am. J. Cond. Matter Phys. 3 13-20
22. Engelken R, Van Doren T and Boone J 1985 Growth of tungsten selenide films through pyrolytic conversion and anodic electrooxidation of ammonium selenotungstate (NH4)2WSe Mater. Res. Bull. 20 1173
23. Carmalt CJ, Parkin I P and Peters E S 2003 Atmospheric pressure chemical vapour deposition ofWS2 thin films on glass Polyhedron 22 1499-505
24. Delphine SM, Jayachandran M and Sanjeeviraja C 2003 Pulsed electrodeposition and characterisation of tungsten diselenide thin films Mater. Chem. Phys. 81 78-83
25. Grigoriev SN, Fominski VY, Gnedovets AG and Romanov R I 2012 Experimental and numerical study of the chemical composition of WSex thin films obtained by pulsed laser deposition in vacuum and in a buffer gas atmosphere Appl. Surf. Sci. 258 7000-7
26. NguyenNT et al 2010 Synthesis and properties of turbostratically disordered, ultrathin WSe2 films Chem. Mater. 22 2750-6
27. Huang J-K et al 2014 Large-Area synthesis of highly crystalline WSe2 monolayers and device applications ACS Nano 8 923-30
28. Salitra G, Hodes G, Klein E and Tenne R 1994 Highly oriented WSe2 thin films prepared by selenization of evaporatedWO3 Thin Solid Films 6090 180-5
29. Mohammad AAL and Gillet M 2002 Phase transformations in WO3 thin films during annealing Thin Solid Films 408 302-9
30. Structural stability and phase transitions inWO3 thin films (http://pubs.acs.org/doi/pdf/10.1021/jp056664i)
31. Desbat B and Lassegues JC 1987 Infrared and Raman study of WO3 tungsten xHzO tungsten trioxide hydrates trioxides and WO3 J. Solid State Chem. 247 235-47
32. Taylor L S and Zografi G 1998 The quantitative analysis of crystallinity using FT-Raman spectroscopy Pharm. Res. 15 755-61
33. Huang X et al 2012 Strain-induced phase transition in β-MnO2 Europhys. Lett. 99 27005
34. Cao J and Wu J 2011 Strain effects in low-dimensional transition metal oxides Mater. Sci. Eng. R 71 35-52
35. Howe JM 1990 Al-Se (Aluminum-Selenium) Binary Alloy Phase Diagrams vol 1, 2nd edn ed T B Massalski pp 208-11
36. WaitkinsGP, Shutt R, Kinney IW and McReynolds J P 1946 Aluminum Selenide and Hydrogen Selenide vol 2 (Hoboken, NJ: Wiley)
37. Cahill DG 2004 Analysis of heat flow in layered structures for time-domain thermoreflectance Rev. Sci. Instrum. 75 5119-22
38. Bresnehan M et al 2013 Prospects of direct growth boron nitride films as substrates for graphene electronics J. Mater. Res. 29 1-13
39. Hopkins P E et al 2012 Manipulating thermal conductance at metal-graphene contacts via chemical functionalization Nano Lett. 12 590-5
40. Kim S, Min J and Cahill DG 2008 Structure of layered WSe2 thin films with ultralow thermal conductivity J. Mater. Res. 23 4
41. MuratoreC et al 2014 Thermal anisotropy in nano-crystalline MoS2 thin films Phys. Chem. Chem. Phys. 16 1008-14
42. Seol JH et al 2010 Two-dimensional phonon transport in supported graphene Science 328 213-6
43. Mavrokefalos A, Nguyen NT, Pettes MT, Johnson DC and Shi L 2007 In-plane thermal conductivity of disordered layered WSe2 andWx(WSe2)y superlattice films Appl. Phys. Lett. 91 171912
44. Muratore C et al 2013Cross-plane thermal properties of transitionmetal dichalcogenides Appl. Phys. Lett. 102 081604
45. Lin Y-C et al 2014 Direct synthesis of van der waals solids ACS Nano 8 3715-23