Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

Physica Status Solidi - Rapid Research Letters

Volumn 7, Issue 3, 2013, Pages 187-191

  Rojas, Jhonathan P ^a   Hussain, Muhammad Mustafa ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

Flexible electronics; High k materials; Metal gates; MOS capacitors; Silicon

Indexed keywords

BENDING RADIUS; CMOS COMPATIBLE; DEGREE OF FREEDOM; ELECTRICAL CHARACTERIZATION; GENERIC PROCESS; HIGH FLEXIBILITY; HIGH PERFORMANCE COMPUTERS; HIGH THERMAL; HIGH-K MATERIALS; HIGH-K/METAL GATES; MECHANICAL CHARACTERIZATIONS; METAL GATE; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; SEMI-TRANSPARENT; SILICON (100); SINGLE CRYSTALLINE SILICON;

CAPACITORS; DIELECTRIC DEVICES; FLEXIBLE ELECTRONICS; MOS CAPACITORS; PHOTOGRAPHY; SILICON; SUPERCOMPUTERS; WIND EFFECTS;

SILICON WAFERS;

EID: 84874787413     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201206490     Document Type: Article

References (20)

1. J. Sun, B. Zhang, and H. E. Katz, Adv. Funct. Mater. 21(1), 29 (2011).
2. A. Baca, J.-H. Ahn, Y. Sun, M. Meitl, E. Menard, H.-S. Kim, W. Choi, D.-H. Kim, Y. Huang, and J. Rogers, Angew. Chem. Int. Ed. 47, 5524 (2008).
3. Y. Lee, H. Li, and S. J. Fonash, IEEE Electron Device Lett. 24, 19 (2003).
4. S. A. Stauth and B. A. Parviz, Proc. Natl. Acad. Sci. USA 103(38), 13922 (2006).
5. S. Mack, M. A. Meitl, A. J. Baca, Z.-T. Zhu, and J. A. Rogers, Appl. Phys. Lett. 88, 213101 (2006).
6. L. Sun, G. Qin, J. Seo, G. K. Celler, W. Zhou, and Z. Ma, Small 6(22), 2553 (2010).
7. A. Carlson, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, Adv. Mater. 24, 5284 (2012).
8. H.-J. Chung, T.-I. Kim, H.-S. Kim, S. A. Wells, S. Jo, N. Ahmed, Y. H. Jung, S. M. Won, C. A. Bower, and J. A. Rogers, Adv. Funct. Mater. 21, 3029 (2011).
9. J. Burghartz, Ultra-thin Chip Technology and Applications (Springer, Stuttgart, 2000).
10. T. Loher, M. Seckel, B. Pahl, L. Bottcher, A. Ostmann, and H. Reichl, 3rd Int. Microsystems, Packaging, Assembly & Circuit Tech. Conf., Taipei, Taiwan, 2008, p. 86.
11. B. J. Kim, H. Jang, S. Lee, B. H. Hong, J. Ahn, and J. H. Cho, Nano Lett. 10, 3464 (2010).
12. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nature Nanotechnol. 6, 147 (2011).
13. J. N. Burghartz, W. Appel, H. D. Rempp, and M. Zimmermann, IEEE Trans. Electron Devices 56(2), 321 (2009).
14. H. Sanda, J. McVittie, M. Koto, K. Yamagata, T. Yonehara, and Y. Nishi, in: IEDM Technical Digest (IEEE International, Washington, USA, 2005), p. 679.
15. J. P. Rojas, A. Syed, and M. M. Hussain, IEEE 25th Int. Conf. MEMS, Paris, France, 2012, p. 281.
16. A. W. Dey, C. Thelander, E. Lind, K. A. Dick, B. M. Borg, M. Borgstrom, P. Nilsson, and L. Wernersson, IEEE Electron Device Lett. 33(6), 791 (2012).
17. H. Liu and P. D. Ye, IEEE Electron Device Lett. 33(4), 546 (2012).
18. S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. 94, 062107 (2009).
19. S. B. S. Heil, J. L. van Hemmen, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 103, 103302 (2008).
20. E. A. Chowdhury, T. N. Adam, G. Qui, I. Rau, J. O. Olowolafe, J. S. Suehle, and Y. Chen, IEEE Trans. Electron Devices 47(1), 121 (2000).