Time-dependent dielectric breakdown evaluation of deep trench capacitor with sidewall hemispherical, polysilicon grains for gigabit DRAM technology

IEEE International Integrated Reliability Workshop Final Report

Volumn 2002-January, Issue , 2002, Pages 71-75

  Chen, Fen ^a   Parkinson, Porshia ^a   McStay, Irene ^c   Settlemyer, Kenneth ^a   Reviere, Robert ^b   Tews, Helmut ^c   Seitz, Mihel ^c   Kim, Min Soo ^c   Ruprecht, Michael ^b   Li, Jinghong ^a   Jamm, Rajarao ^a   Strong, Alvin ^a  

^a IBM MICROELECTRONICS   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c INFINEON TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE;

CAPACITANCE ENHANCEMENT; CELL-SIZE; DEEP TRENCH CAPACITORS; DRAM CELLS; DRAM TECHNOLOGY; GIGABIT DRAM; POLYSILICON GRAINS; SCALINGS; STORAGE CAPACITANCE; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 33645594429     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2002.1194236     Document Type: Conference Paper

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