Uniqueness in activation energy and charge-to-breakdown of highly asymmetrical DRAM Al2O3 cell capacitors

IEEE Electron Device Letters

Volumn 25, Issue 8, 2004, Pages 574-576

  Banerjee, Parag ^a   Ditali, Akram ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINA; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRODES; POLYSILICON; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING;

CELL CAPACITORS; CHARGE-TO-BREAKDOWN; THERMOCHEMICAL MODEL; TIME DEPENDENT DIELECTRIC BREAKDOWN;

MOS CAPACITORS;

EID: 3943086314     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.831900     Document Type: Article

References (7)

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